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A0-VS122PA300M7-L757F7 PDF预览

A0-VS122PA300M7-L757F7

更新时间: 2024-09-24 11:08:19
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
17页 1579K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

A0-VS122PA300M7-L757F7 数据手册

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A0-VS122PA300M7-L757F70  
A0-VP122PA300M7-L757F70T  
datasheet  
1200 V / 300 A  
VINcoDUAL E3  
Features  
VINco E3 housing  
● IGBT M7 technology with low V CEsat  
and improved EMC behavior  
● New SoLid Cover Technology for higher reliability  
● Industry standard housing  
● Press-fit pin and pre-applied phase-change  
● Thermal Interface Material available  
Schematic  
Target applications  
● Industrial Drives  
● Power Supply  
● UPS  
Types  
● A0-VS122PA300M7-L757F70  
● A0-VP122PA300M7-L757F70T  
Maximum Ratings  
T
j
= 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Half-Bridge Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
1200  
315  
600  
656  
±20  
175  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
A
W
V
Maximum junction temperature  
°C  
Copyright Vincotech  
1
06 Apr. 2017 / Revision 1  

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