Datasheet > A0-VP122PA300M7-L757F70T

A0-VP122PA300M7-L757F70T

更新时间： 2024-11-13 11:08:19

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	1579K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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中文翻译

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数据手册

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A0-VP122PA300M7-L757F70T 数据手册

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A0-VS122PA300M7-L757F70

A0-VP122PA300M7-L757F70T

datasheet

1200 V / 300 A

VINcoDUAL E3

Features

VINco E3 housing

● IGBT M7 technology with low V _CEsat

and improved EMC behavior

● New SoLid Cover Technology for higher reliability

● Industry standard housing

● Press-fit pin and pre-applied phase-change

● Thermal Interface Material available

Schematic

Target applications

● Industrial Drives

● Power Supply

● UPS

Types

● A0-VS122PA300M7-L757F70

● A0-VP122PA300M7-L757F70T

Maximum Ratings

= 25 °C, unless otherwise specified

Parameter

Symbol

Condition

Value

Unit

Half-Bridge Switch

V_CES

I_C

I_CRM

P_tot

V_GES

T_jmax

Collector-emitter voltage

1200

315

600

656

±20

175

Collector current

T_j= T_jmax

T_s= 80 °C

Repetitive peak collector current

Total power dissipation

Gate-emitter voltage

t_plimited by T_jmax

T_j= T_jmax

Maximum junction temperature

°C

06 Apr. 2017 / Revision 1

12 3 4 5 6 7...17

中文翻译

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