5秒后页面跳转
BCX56-16-BL PDF预览

BCX56-16-BL

更新时间: 2024-02-17 14:59:16
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管局域网
页数 文件大小 规格书
1页 20K
描述
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

BCX56-16-BL 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-F3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.82
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PSSO-F3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN表面贴装:YES
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):130 MHz

BCX56-16-BL 数据手册

  
BCX54  
BCX55  
BCX56  
SOT89 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTORS  
ISSUE 3 – FEBRUARY 1996  
PARTMARKING DETAILS:-  
C
BCX54 – BA  
BCX55 – BE  
BCX56 – BH  
BCX54-10 – BC  
BCX55-10 – BG  
BCX56-10 – BK  
BCX54-16 – BD  
BCX55-16 – BM  
BCX56-16 – BL  
E
COMPLEMENTARY TYPES:-  
C
B
BCX54 – BCX51  
BCX55 – BCX52  
BCX56 – BCX53  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
BCX54 BCX55  
BCX56  
100  
UNIT  
V
Collector-Base Voltage  
45  
45  
60  
Collector-Em itter Voltage  
Em itter-Base Voltage  
60  
80  
V
5
V
Peak Pulse Current  
2
A
Continuous Collector Current  
Power Dissipation at Tam b=25°C  
IC  
1
A
Ptot  
1
W
°C  
Operating and Storage Tem perature Range Tj:Tstg  
-65 to +150  
ELECTRICAL CHARACTERISTICS (at T  
am b  
= 25°C unless otherw ise stated).  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Collector-Base Breakdown BCX54 V(BR)CBO  
45  
60  
100  
Voltage  
BCX55  
BCX56  
V
I
=100µA  
C
Collector-Em itter  
Breakdown Voltage  
BCX54 V(BR)CEO  
BCX55  
BCX56  
45  
60  
80  
V
V
I
=10m A*  
C
Em itter-Base Breakdown Voltage  
Collector Cut-Off Current  
V(BR)EBO  
ICBO  
5
IE =10µA  
0.1  
20  
VCB =30V  
V
µA  
µA  
CB =30V, Tam b =150°C  
Em itter Cut-Off Current  
IEBO  
20  
nA  
V
VEB =4V  
Collector-Em itter Saturation Voltage VCE(sat)  
0.5  
1.0  
IC =500m A, IB =50m A*  
IC =500m A, VCE =2V*  
IC =5m A, VCE =2V*  
Base-Em itter Turn-On Voltage  
VBE(on)  
hFE  
V
Static Forward Current Transfer  
Ratio  
25  
40  
25  
63  
250  
I
I
I
C =150m A, VCE =2V*  
C =500m A, VCE =2V*  
C =150m A, VCE =2V*  
IC =150m A, VCE =2V*  
–10  
–16  
160  
250  
100  
Transition Frequency  
Output Capacitance  
fT  
150  
MHz IC =50m A, VCE =10V,  
f=100MHz  
Cobo  
15  
pF  
VCB =10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3 - 35  

与BCX56-16-BL相关器件

型号 品牌 描述 获取价格 数据表
BCX56-16E6327 INFINEON Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon

获取价格

BCX56-16E6433 INFINEON Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon

获取价格

BCX56-16HE3 MCC Tape: 1K/Reel , 40K/Ctn;

获取价格

BCX5616Q DIODES NPN, 80V, 1A, SOT89

获取价格

BCX56-16Q YANGJIE SOT-89

获取价格

BCX56-16-Q NEXPERIA 80 V, 1 A NPN medium power transistorsProduction

获取价格