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BCX38A PDF预览

BCX38A

更新时间: 2024-01-18 16:54:49
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号双极晶体管达林顿晶体管局域网
页数 文件大小 规格书
3页 64K
描述
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

BCX38A 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:not_compliant
风险等级:5.66集电极-发射极最大电压:60 V
配置:DARLINGTON最小直流电流增益 (hFE):10000
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONVCEsat-Max:1.25 V
Base Number Matches:1

BCX38A 数据手册

 浏览型号BCX38A的Datasheet PDF文件第2页浏览型号BCX38A的Datasheet PDF文件第3页 
NPN SILICON PLANAR MEDIUM  
BCX38A/B/C  
POWER DARLINGTON TRANSISTORS  
ISSUE 1 – MARCH 94  
FEATURES  
*
*
*
60 Volt VCEO  
Gain of 10K at IC=0.5 Amp  
Ptot=1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
80  
Collector-Emitter Voltage  
Emitter-Base Voltage  
60  
V
10  
V
Peak Pulse Current  
2
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
800  
1
mA  
W
°C  
Ptot  
Tj:Tstg  
-55 to +200  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL  
V(BR)CBO  
MIN.  
80  
TYP.  
MAX.  
UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
V
V
IC=10µA, IE=0  
Collector-Emitter  
Sustaining Voltage  
VCEO(sus) 60  
V(BR)EBO 10  
ICBO  
IC=10mA, IB=0  
Emitter-Base  
Breakdown Voltage  
IE=10µA, IC=0  
Collector Cut-Off  
Current  
100  
nA  
nA  
V
VCB=60V, IE=0  
VEB=8V, IC=0  
Emitter Cut-Off  
Current  
IEBO  
100  
1.25  
1.8  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(on)  
IC=800mA, IB=8mA*  
IC=800mA, VCE=5V*  
Base-Emitter  
Turn-on Voltage  
V
Static  
BCX38A hFE  
500  
1000  
IC=100mA, VCE=5V*  
IC=500mA, VCE=5V*  
Forward  
Current  
Transfer  
Ratio  
BCX38B  
BCX38C  
2000  
4000  
IC=100mA, VCE=5V*  
IC=500mA, VCE=5V*  
5000  
10000  
IC=100mA, VCE=5V*  
IC=500mA, VCE=5V*  
3-20  

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