5秒后页面跳转
BCX38 PDF预览

BCX38

更新时间: 2024-01-06 03:58:00
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管达林顿晶体管局域网
页数 文件大小 规格书
3页 64K
描述
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

BCX38 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:not_compliant
风险等级:5.66集电极-发射极最大电压:60 V
配置:DARLINGTON最小直流电流增益 (hFE):10000
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONVCEsat-Max:1.25 V
Base Number Matches:1

BCX38 数据手册

 浏览型号BCX38的Datasheet PDF文件第2页浏览型号BCX38的Datasheet PDF文件第3页 
NPN SILICON PLANAR MEDIUM  
BCX38A/B/C  
POWER DARLINGTON TRANSISTORS  
ISSUE 1 – MARCH 94  
FEATURES  
*
*
*
60 Volt VCEO  
Gain of 10K at IC=0.5 Amp  
Ptot=1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
80  
Collector-Emitter Voltage  
Emitter-Base Voltage  
60  
V
10  
V
Peak Pulse Current  
2
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
800  
1
mA  
W
°C  
Ptot  
Tj:Tstg  
-55 to +200  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL  
V(BR)CBO  
MIN.  
80  
TYP.  
MAX.  
UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
V
V
IC=10µA, IE=0  
Collector-Emitter  
Sustaining Voltage  
VCEO(sus) 60  
V(BR)EBO 10  
ICBO  
IC=10mA, IB=0  
Emitter-Base  
Breakdown Voltage  
IE=10µA, IC=0  
Collector Cut-Off  
Current  
100  
nA  
nA  
V
VCB=60V, IE=0  
VEB=8V, IC=0  
Emitter Cut-Off  
Current  
IEBO  
100  
1.25  
1.8  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(on)  
IC=800mA, IB=8mA*  
IC=800mA, VCE=5V*  
Base-Emitter  
Turn-on Voltage  
V
Static  
BCX38A hFE  
500  
1000  
IC=100mA, VCE=5V*  
IC=500mA, VCE=5V*  
Forward  
Current  
Transfer  
Ratio  
BCX38B  
BCX38C  
2000  
4000  
IC=100mA, VCE=5V*  
IC=500mA, VCE=5V*  
5000  
10000  
IC=100mA, VCE=5V*  
IC=500mA, VCE=5V*  
3-20  

与BCX38相关器件

型号 品牌 描述 获取价格 数据表
BCX38A CDIL NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS

获取价格

BCX38A ZETEX NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

获取价格

BCX38A CENTRAL Small Signal Transistors

获取价格

BCX38A-18F CENTRAL Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F,

获取价格

BCX38A-18FLEADFREE CENTRAL Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F,

获取价格

BCX38A-18R CENTRAL Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R,

获取价格