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BCW72 PDF预览

BCW72

更新时间: 2024-01-23 08:32:21
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管开关光电二极管局域网
页数 文件大小 规格书
2页 95K
描述
SOT23 NPN PLANAR SMALL SIGNAL TRANSISTORS

BCW72 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.13最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
VCEsat-Max:0.25 VBase Number Matches:1

BCW72 数据手册

 浏览型号BCW72的Datasheet PDF文件第2页 
SOT23 NPN PLANAR  
BCW71  
BCW72  
SMALL SIGNAL TRANSISTORS  
ISSUE 2 – FEBRUARY 1995  
PARTMARKING DETAILS –  
BCW71  
BCW72  
– K1  
– K2  
E
C
BCW71R – K4  
BCW72R – K5  
B
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
50  
Collector-Emitter Voltage  
45  
5
V
Emitter-Base Voltage  
V
Peak Pulse Current  
200  
mA  
mA  
mW  
°C  
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
IC  
100  
PTOT  
tj:tstg  
330  
-55 to +150  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Collector-Base Cut-Off  
Current  
ICBO  
100  
10  
nA  
µA  
IE=0, VCB=20V  
IE=0,  
VCB=20V,Tj=100°C  
Base-Emitter Voltage  
VBE  
550  
700  
250  
mV  
IC=2.0mA, VCE=5V  
Collector-Emitter Saturation VCE(sat)  
Voltage  
120  
210  
mV  
mV  
IC=10mA, IB=0.5mA  
IC=50mA, IB=2.5mA  
Base-Emitter Saturation  
Voltage  
VBE(sat)  
750  
850  
mV  
mV  
IC=10mA, IB=0.5mA  
IC=50mA, IB=2.5mA  
Static Forward  
Current Transfer  
Ratio  
BCW71  
BCW72  
hFE  
90  
I
I
C =10µA, VCE =5V  
C =2mA, VCE =5V  
110  
200  
220  
450  
150  
300  
IC =10µA, VCE =5V  
IC =2mA, VCE =5V  
Transition Frequency  
Collector Capacitance  
Noise Figure  
fT  
MHz  
pF  
IC =10mA, VCE =5V  
f =35MHz  
CTC  
N
4
IE =Ie =0, VCB =10V  
f =1MHz  
10  
dB  
IC =200µA, VCE =5V  
RS =2K, f =1KHz  
B =200Hz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for these devices  
PAGE NO  

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