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BCW60CR PDF预览

BCW60CR

更新时间: 2024-02-03 04:19:18
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管局域网
页数 文件大小 规格书
2页 62K
描述
SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS

BCW60CR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:not_compliant
HTS代码:8541.21.00.95风险等级:5.13
其他特性:LOW NOISE基于收集器的最大容量:2.5 pF
集电极-发射极最大电压:32 V配置:SINGLE
最小直流电流增益 (hFE):130JESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
VCEsat-Max:0.55 VBase Number Matches:1

BCW60CR 数据手册

 浏览型号BCW60CR的Datasheet PDF文件第2页 
SOT23 NPN SILICON PLANAR  
SMALL SIGNAL TRANSISTORS  
ISSUE 2 – AUGUST 1995  
BCW60  
PARTMARKING DETAILS  
BCW60A – AA  
BCW60B – AB  
BCW60C – AC  
BCW60D – AD  
BCW60AR – CR  
BCW60BR – DR  
BCW60CR – AR  
BCW60DR – BR  
E
C
B
COMPLEMENTARY TYPE  
BCW61  
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
32  
Collector-Emitter Voltage  
Emitter-Base Voltage  
32  
V
5
200  
V
Continuous Collector Current  
Base Current  
mA  
mA  
mW  
°C  
IB  
50  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
PTOT  
tj:tstg  
330  
-55 to +150  
FOUR TERMINAL NETWORK DATA (I =2mA, V =5V, f=1kHz)  
CE  
c
hFEGroup A  
hFEGroup B  
hFE Group C  
hFEGroup D  
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.  
h11e  
h12e  
h21e  
h22e  
1.6  
2.7  
1.5  
200  
18  
4.5  
2.5  
3.6  
2
6.0  
50  
3.2  
4.5  
2
8.5  
60  
4.5  
7.5  
3
12  
kΩ  
10-4  
260  
24  
330  
30  
520  
50  
30  
100  
µS  
SWITCHING CIRCUIT  
-VBB  
VCC(+10V)  
R
R
1µsec  
R
+10V  
tr < 5nsec  
Zin 100kΩ  
tr < 5nsec  
50Ω  
Oscilloscope  
Mark/Space ratio < 0.01  
Zs=50Ω  
PAGE NO  

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