BCP69-25

更新时间： 2024-01-09 16:37:29

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描述
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

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技术参数
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BCP69-25 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	1.6	湿度敏感等级：	1
峰值回流温度（摄氏度）：	260	处于峰值回流温度下的最长时间：	10
Base Number Matches：	1

BCP69-25 数据手册

SOT223 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

BCP69

ISSUE 3 FEBRUARY 1996

✪

FEATURES

For AF drivers and output stages

High collector current and Low V_CE(sat)

COMPLEMENTARY TYPE BCP68

PARTMARKING DETAIL

BCP69

BCP69 25

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

-25

-20

-5

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

-2

Continuous Collector Current

Power Dissipation at T_amb=25°C

I_C

-1

P_tot

°C

Operating and Storage Temperature

Range

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

V_(BR)CBO-25

TYP.

MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

I_C=-10µA

I_C=- 30mA

I_E=-10µA

Collector-Emitter

Breakdown Voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

-20

-5

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

-100

-10

µA

_CB=-25V

V_CB=-25V, T_amb=150°C

Emitter Cut-Off Current I_EBO

-10

V_EB=-5V

µA

Collector-Emitter

Saturation Voltage

V_CE(sat)

-0.5

I_C=-1A, I_B=-100mA*

Base-Emitter Turn-On V_BE(on)

Voltage

- 0.6

I_C=-5A, V_CE=-10V*

I_C=-1A, V_CE=-1V*

-1.0

Static Forward Current h_FE

Transfer Ratio

I_C=-5mA, V_CE=-10V*

I_C=-500mA, V_CE=-1V*

BCP69

400

BCP69-25 160

250

100

Transition Frequency

f_T

MHz

I_C=-100mA, V_CE=-5V,

f=100MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

For typical characteristics graphs see FMMT549 datasheet.

3 - 20

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