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BCP68TA

更新时间: 2024-01-25 06:03:30
品牌 Logo 应用领域
捷特科 - ZETEX 放大器光电二极管晶体管
页数 文件大小 规格书
1页 43K
描述
Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

BCP68TA 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):63JESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.5 VBase Number Matches:1

BCP68TA 数据手册

  
SOT223 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
BCP68  
ISSUE 3 – FEBRUARY 1996  
FEATURES  
*
*
Suitable for AF drivers and output stages  
High collector current and Low VCE(sat)  
C
COMPLEMENTARY TYPE – BCP69  
E
C
PARTMARKING DETAIL –  
BCP68  
B
BCP68 – 25  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
Collector-Base Voltage  
25  
20  
5
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
Peak Pulse Current  
2
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
1
A
Ptot  
2
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
V(BR)CBO 25  
TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
V
V
IC=10µA  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
20  
5
IC= 30mA *  
IE=10µA  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
100  
10  
nA  
µA  
V
CB=25V  
VCB=25V, Tamb=150°C  
Emitter Cut-Off Current IEBO  
10  
VEB=5V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.5  
V
IC=1A, IB=100mA*  
Base-Emitter Turn-On VBE(on)  
Voltage  
0.6  
V
V
IC=5A, VCE=10V*  
IC=1A, VCE=1V*  
1.0  
Static Forward Current hFE  
Transfer Ratio  
50  
63  
IC=5mA, VCE=10V*  
IC=500mA, VCE=1V*  
IC=500mA, VCE=1V*  
BCP68  
400  
400  
BCP68-25 160  
250  
100  
Transition Frequency  
fT  
MHz  
IC=100mA, VCE=5V,  
f=100MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
For typical characteristics graphs see FMMT449 datasheet.  
3 - 19  

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