BCP68-25

更新时间： 2024-02-11 19:19:33

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描述
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

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技术参数
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BCP68-25 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.63
Base Number Matches：	1

BCP68-25 数据手册

SOT223 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

BCP68

ISSUE 3 FEBRUARY 1996

✪

FEATURES

Suitable for AF drivers and output stages

High collector current and Low V_CE(sat)

COMPLEMENTARY TYPE BCP69

PARTMARKING DETAIL

BCP68

BCP68 25

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb=25°C

I_C

P_tot

°C

Operating and Storage Temperature

Range

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

V_(BR)CBO25

TYP.

MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

I_C=10µA

Collector-Emitter

Breakdown Voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C= 30mA *

I_E=10µA

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

100

µA

_CB=25V

V_CB=25V, T_amb=150°C

Emitter Cut-Off Current I_EBO

V_EB=5V

µA

Collector-Emitter

Saturation Voltage

V_CE(sat)

0.5

I_C=1A, I_B=100mA*

Base-Emitter Turn-On V_BE(on)

Voltage

0.6

I_C=5A, V_CE=10V*

I_C=1A, V_CE=1V*

1.0

Static Forward Current h_FE

Transfer Ratio

I_C=5mA, V_CE=10V*

I_C=500mA, V_CE=1V*

BCP68

400

BCP68-25 160

250

100

Transition Frequency

f_T

MHz

I_C=100mA, V_CE=5V,

f=100MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

For typical characteristics graphs see FMMT449 datasheet.

3 - 19

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