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BCP53-10 PDF预览

BCP53-10

更新时间: 2024-02-10 03:23:49
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管局域网
页数 文件大小 规格书
1页 46K
描述
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

BCP53-10 技术参数

生命周期:Active零件包装代码:SC-73
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantFactory Lead Time:4 weeks
风险等级:1.52外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):63
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
参考标准:AEC-Q101; IEC-60134表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):140 MHz
Base Number Matches:1

BCP53-10 数据手册

  
SOT223 PNP SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
BCP53  
ISSUE 3 – AUGUST 1995  
FEATURES  
*
*
Suitable for AF drivers and output stages  
High collector current and Low VCE(sat)  
C
COMPLEMENTARY TYPE – BCP56  
E
C
PARTMARKING DETAILS – BCP53  
BCP53 – 10  
B
BCP53 – 16  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
-100  
-80  
-5  
UNIT  
Collector-Base Voltage  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
Peak Pulse Current  
-1.5  
-1  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
A
Ptot  
2
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
V(BR)CBO -100  
TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
V
V
IC=-100µA  
IC=- 10mA *  
IE=-10µA  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
-80  
-5  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
-100  
-20  
nA  
µA  
V
CB=-30V  
VCB=-30V, Tamb=150°C  
Emitter Cut-Off Current IEBO  
-10  
VEB=-5V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-0.5  
V
IC=-500mA, IB=-50mA*  
Base-Emitter Turn-On VBE(on)  
Voltage  
-1.0  
250  
V
IC=-500mA, VCE=-2V*  
Static Forward Current hFE  
Transfer Ratio  
40  
25  
IC=-150mA, VCE=-2V*  
IC=-500mA, VCE=-2V*  
IC=-150mA, VCE=-2V*  
IC=-150mA, VCE=-2V*  
BCP53-10 63  
BCP53-16 100  
100  
160  
160  
250  
Transition Frequency  
fT  
125  
MHz  
IC=-50mA, VCE=-10V,  
f=100MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3 - 15  

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