5秒后页面跳转
BC868 PDF预览

BC868

更新时间: 2024-02-04 12:40:42
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管局域网
页数 文件大小 规格书
1页 22K
描述
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

BC868 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.15最大集电极电流 (IC):1 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):85JESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:SINGLE
晶体管元件材料:SILICON标称过渡频率 (fT):60 MHz
VCEsat-Max:0.5 VBase Number Matches:1

BC868 数据手册

  
SOT89 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
BC868  
ISSUE 4 - OCTOBER 1995  
FEATURES  
*
SUITABLE FOR GENERAL AF APPLICATIONS AND  
C
CLASS B AUDIO OUTPUT STAGES UPTO 3W  
HIGH hFE AND LOW SATURATION VOLTAGE  
*
COMPLEMENTARY TYPE -  
PARTMARKING DETAILS–  
BC869  
E
C
BC868  
- CAC  
B
BC868-16 - CCC  
BC868-25 - CDC  
SOT89  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
25  
Collector-Em itter Voltage  
20  
V
Em itter-Base Voltage  
5
V
Peak Pulse Current  
2
A
Continuous Collector Current  
Power Dissipation at Tam b =25°C  
Operating and Storage Tem perature Range  
ELECTRICAL CHARACTERISTICS (at T  
IC  
1
A
Ptot  
1
W
°C  
Tj:Tstg  
-65 to +150  
= 25°C unless otherw ise stated).  
am b  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX.  
UNIT  
V
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
25  
20  
5
IC=100µA  
Collector-Em itter  
Breakdown Voltage  
V
V
IC=10m A*  
IE=10µA  
Em itter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
10  
1
VCB = 25V  
µA  
m A  
o
VCB = 25V,Tam b =150 C  
Em itter Cut-Off Current  
IEBO  
10  
VEB=5V  
µA  
Collector-Em itter  
Saturation Voltage  
VCE(sat)  
0.5  
V
IC=1A, IB=100m A*  
Base-Em itter Turn-On  
Voltage  
VBE(on)  
hFE  
1.0  
V
IC=1A, VCE=1V*  
Static Forward Current  
Transfer Ratio  
50  
85  
60  
IC=5m A, VCE=10V*  
IC=500m A, VCE=1V*  
IC=1A, VCE=1V*  
375  
BC868-16 100  
BC868-25 160  
250  
375  
IC=500m A, VCE=1V*  
IC=500m A, VCE=1V*  
Transition Frequency  
Output Capacitance  
fT  
60  
45  
MHz  
pF  
IC=10m A, VCE=5V  
f = 35MHz  
Cobo  
VCB=10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
For typical characteristics graphs see FMMT449 datasheet.  
3 - 11  

与BC868相关器件

型号 品牌 描述 获取价格 数据表
BC868(SOT-89-3L) JCST 暂无描述

获取价格

BC868,115 ETC TRANS NPN 20V 1A SOT89

获取价格

BC868/T1 ETC TRANSISTOR SOT-89

获取价格

BC868-10 MCC 0.5W NPN Medium Power Transistors

获取价格

BC868-10(SOT-89-3L) JCST Transistor

获取价格

BC868-10-T MCC Transistor

获取价格