生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | compliant | 风险等级: | 5.35 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 45 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 220 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
BC860B-TAPE-13 | NXP | TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |
获取价格 |
|
BC860B-TAPE-7 | NXP | TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |
获取价格 |
|
BC860BTC | DIODES | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon |
获取价格 |
|
BC860BTR | CENTRAL | Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon, |
获取价格 |
|
BC860BTR13 | CENTRAL | Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon, |
获取价格 |
|
BC860BTR13LEADFREE | CENTRAL | Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon, |
获取价格 |