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BC848CTA PDF预览

BC848CTA

更新时间: 2024-01-28 16:57:25
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管光电二极管局域网
页数 文件大小 规格书
3页 46K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

BC848CTA 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
风险等级:5.56Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):110
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC848CTA 数据手册

 浏览型号BC848CTA的Datasheet PDF文件第2页浏览型号BC848CTA的Datasheet PDF文件第3页 
BC846  
BC848  
BC850  
BC847  
BC849  
SOT23 NPN SILICON PLANAR  
GENERAL PURPOSE TRANSISTORS  
ISSUE 6 - JANUARY 1997  
PARTMARKING DETAILS  
BC846A–Z1A BC848B–1K  
COMPLEMENTARY TYPES  
BC846  
BC847  
BC848  
BC849  
BC850  
BC856  
BC857  
BC858  
BC859  
BC860  
BC846B–1B  
BC847A–Z1E BC849B–2B  
BC847B–1F BC849C–2C  
BC847C–1GZ BC850B–2FZ  
BC848A–1JZ BC850C-Z2G  
BC848C–Z1L  
E
C
B
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
UNIT  
V
PARAMETER  
SYMBOL  
BC846  
80  
BC847  
50  
BC848  
30  
BC849  
30  
BC850  
50  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Peak Base Current  
VCBO  
VCES  
VCEO  
VEBO  
IC  
80  
50  
30  
30  
50  
V
65  
45  
30  
30  
45  
V
6
5
V
100  
200  
200  
200  
330  
mA  
mA  
mA  
mA  
mW  
°C  
ICM  
IBM  
Peak Emitter Current  
Power Dissipation at Tamb=25°C  
IEM  
Ptot  
Operating and Storage  
Temperature Range  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
UNIT CONDITIONS.  
BC846 BC847 BC848 BC849 BC850  
PARAMETER  
SYMBOL  
Collector Cut-Off Current ICBO  
Max  
Max  
nA  
VCB = 30V  
CB = 30V  
Tamb=150°C  
15  
5
V
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat) Typ  
Max.  
90  
250  
mV IC=10mA,  
mV IB=0.5mA  
Typ  
Max.  
200  
600  
mV IC=100mA,  
mV IB=5mA  
Typ  
Max.  
300  
600  
mV IC=10mA*  
mV  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
700  
mV IC=10mA,  
IB=0.5mA  
Typ  
900  
mV IC=100mA,  
IB=5mA  
Typ  
Base-Emitter Voltage  
VBE  
580  
660  
700  
mV IC=2mA  
mV VCE=5V  
mV  
Min  
Typ  
Max  
770  
mV IC=10mA  
VCE=5V  
Max  
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the  
operating point IC = 11mA, VCE = 1V at constant base current.  

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