SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
BST40
ISSUE 3 – J ANUARY 1996
✪
COMPLEMENTARY TYPE – BST15
PARTMAKING DETAIL — AT2
C
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
300
Collector-Em itter Voltage
Em itter-Base Voltage
250
V
5
V
Peak Pulse Current
1
A
Continuous Collector Current
Power Dissipation at Tam b=25°C
Operating and Storage Tem perature Range
IC
500
1
m A
W
Ptot
Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
SYMBOL MIN.
MAX.
UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
300
IC=100µA, IE=0
Collector-Em itter
Breakdown Voltage
250
5
V
V
IC=1m A, IB=0*
Em itter-Base
IE=100µA, IC=0
Breakdown Voltage
Em itter Cut-Off Current
Collector Cut-Off Current
IEBO
10
20
0.5
VEB=5V, IE=0
VCB=300V
µA
nA
V
ICBO
Collector-Em itter
Saturation Voltage
VCE(sat)
IC=50m A, IB=4m A
Base-Em itter
Saturation Voltage
VBE(sat)
hFE
1.3
V
IC=50m A, IB=4m A
Static Forward Current
Transfer Ratio
40
70
IC=20m A, VCE=10V*
Transition Frequency
fT
MHz
IC=10m A, VCE=10V,
f=5MHz
Output Capacitance
Input Capacitance
Cobo
Cibo
2
pF
pF
VCB=10V, f=1MHz
VEB=5V, f=1MHz
30
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMTA42 datasheet.
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