SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
FMMT555
ISSUE 4 – AUGUST 2003
FEATURES
*
*
150 Volt VCEO
1 Amp continuous current
E
C
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
FMMT455
555
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-160
Collector-Emitter Voltage
Emitter-Base Voltage
-150
V
-5
V
Peak Pulse Current
-2
-1
A
Continuous Collector Current
Base Current
IC
A
IB
-200
mA
mW
°C
Power Dissipation at Tamb = 25°C
Operating and Storage Temperature Range
Ptot
500
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
SYMBOL MIN.
MAX
UNIT
V
CONDITIONS.
IC=-100 A
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-160
-150
-5
Collector-Emitter
Breakdown Voltage
V
V
IC=-10mA*
IE=-100 A
VCB =-140V
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
-0.1
-10
A
A
V
CB =-140V, Tamb=100°C
IEBO
-0.1
-0.3
V
EB=-4V
A
V
Collector-Emitter
Saturation Voltage
VCE(sat)
IC=-100mA, IB=-10mA*
IC=-100mA, IB=-10mA*
IC=-100mA, VCE =-10V*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-1
-1
V
V
Base-Emitter
Turn-on Voltage
Static Forward Current
Transfer Ratio
50
50
IC=-10mA, VCE =-10V*
IC=-300mA, VCE =-10V*
300
Transition Frequency
fT
100
MHz
pF
IC=-50mA, VCE =-10V
f=100MHz
Output Capacitance
Cobo
10
VCB =-10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 131