Datasheet > 2N7002

2N7002

更新时间： 2024-01-13 05:02:46

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	28K
描述
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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技术参数
数据手册

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2N7002 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002 数据手册

SOT23 N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

2N7002

ISSUE 3 – J ANUARY 1996

FEATURES

60 Volt V_CEO

PARTMARKING DETAIL – 702

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

S YMBOL

V_DS

VALUE

UNIT

Dra in -S o u rce Vo lta g e

Co n tin u o u s Drain Cu rren t at T_{a m b}=25°C

Pu ls ed Dra in Cu rre n t

I_D

115

m A

I_DM

800

Ga te-S o u rce Vo lta g e

V_GS

± 40

Po w er Dis s ip a tio n a t T_{a m b}=25°C

Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e

P_{to t}

330

m W

°C

T_j:T_{s tg}

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherw ise stated).

am b

PARAMETER

S YMBOL MIN. MAX. UNIT CONDITIONS .

Dra in -S o u rce Bre a kd o w n

Vo lta g e

BV_{DS S}

I_D=10µA, V_GS=0V

Ga te-S o u rce Th re s h o ld

Vo lta g e

V_{GS (th )}

2.5

I_D=250m A, V_DS= V_GS

Ga te-Bo d y Lea ka g e

I_{GS S}

I_{DS S}

n A

V_GS=± 20V, V_DS=0V

Ze ro Ga te Vo lta g e Dra in

Cu rre n t

500

V_DS=48V, V_GS=0V

V_DS=48V, V_GS=0V, T=125°C(2)

µA

On -S ta te Dra in Cu rre n t(1)

I_{D(o n )}

500

m A

V_DS=25V, V_GS=10V

V_GS=10V, I_D=500m A

S tatic Drain -S o u rce On -S ta te

Vo lta g e (1)

V_{DS (o n )}

3.75

375

m V

V_GS=5V, I_D=50m A

S tatic Drain -S o u rce On -S ta te

Res ista n ce (1)

R_{DS (o n )}

g _fs

7.5

V_GS=10V, I_D=500m A

Ω

V_GS=5V, I_D=50m A

Fo rw a rd Tra n s co n d u ctan ce

(1)(2)

m S

V_DS=25V, I_D=500m A

In p u t Ca p a cita n ce (2)

C_{is s}

p F

Co m m o n S o u rce Ou tp u t

Cap acita n ce (2)

C_{o s s}

V_DS=25V, V_GS=0V, f=1MHz

Reve rs e Tra n s fe r Cap acita n ce C_{rs s}

(2)

p F

Tu rn -On Tim e (2)(3)

Tu rn -Off Tim e (2)(3)

t_{(o n )}

t_{(o ff)}

n s

_DD≈30V, I_D=200m A

R_g=25Ω, R_L=150Ω

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sam ple test.

(3) Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator

Spice param eter data is available upon request for this device

3 - 2

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