PNP SILICON PLANAR
2N6732
MEDIUM POWER TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
*
*
*
80 Volt VCEO
Gain of 100 at IC = 350 mA
Ptot=1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-100
Collector-Emitter Voltage
Emitter-Base Voltage
-80
V
-5
V
Peak Pulse Current
-2
A
Continuous Collector Current
Power Dissipation at Tamb= 25°C
Operating and Storage Temperature Range
IC
-1
1
A
Ptot
W
°C
Tj:Tstg
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-100
-80
-5
V
IC=-100µA, IE=0
IC=-10mA, IB=0*
IE=-1mA, IC=0
Collector-Emitter
Breakdown Voltage
V
Emitter-Base
Breakdown Voltage
V
Collector Cut-Off
Current
-0.1
VCB=-80V, IE=0
µA
Emitter Cut-Off Current IEBO
-10
VEB=-5V, IC=0
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.35
V
IC=-350mA, IB=-35mA*
Base-Emitter Turn-On VBE(on)
Voltage
-1.0
V
IC=-350mA, VCE=-2V*
Static Forward Current hFE
Transfer Ratio
100
100
IC=-10mA, VCE=-2V*
IC=-350mA, VCE=-2V*
300
500
Transition
Frequency
fT
50
MHz
pF
IC=-200mA, VCE=-5V
f=20MHz
Collector-Base
Capacitance
CCB
20
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3-11