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2N6725

更新时间: 2024-01-12 00:39:00
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捷特科 - ZETEX 晶体小信号双极晶体管达林顿晶体管局域网
页数 文件大小 规格书
1页 31K
描述
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

2N6725 技术参数

生命周期:Obsolete包装说明:TO-237, 3 PIN
Reach Compliance Code:compliant风险等级:5.82
最大集电极电流 (IC):2 A基于收集器的最大容量:10 pF
集电极-发射极最大电压:50 V配置:DARLINGTON
最小直流电流增益 (hFE):4000JEDEC-95代码:TO-237AA
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN最大功率耗散 (Abs):2 W
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:1.5 V

2N6725 数据手册

  
NPN SILICON PLANAR MEDIUM POWER  
DARLINGTON TRANSISTORS  
ISSUE 1 – MARCH 94  
2N6724  
2N6725  
FEATURES  
*
*
*
50 Volt VCEO  
Gain of 15k at IC = 0.5 Amp  
Ptot=1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
2N6724 2N6725  
UNIT  
Collector-Base Voltage  
50  
40  
60  
50  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
10  
2
V
Peak Pulse Current  
A
Continuous Collector Current  
Power Dissipation at Tamb= 25°C  
Operating and Storage Temperature Range  
IC  
1
A
Ptot  
1
W
°C  
Tj:Tstg  
-55 to +200  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
2N6724  
2N6725  
UNIT CONDITIONS.  
MIN. MAX. MIN. MAX.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
50  
40  
10  
60  
50  
10  
V
V
V
IC=1µA, IE=0  
IC=1mA, IB=0*  
IE=10µA, IC=0  
Collector-Emitter  
Breakdown Voltage  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
1.0  
0.1  
V
V
CB=30V, IE=0  
CB=40V, IE=0  
µA  
µA  
1.0  
0.1  
Emitter Cut-Off  
Current  
IEBO  
VEB=8V, IC=0  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
hFE  
1.0  
1.5  
1.0  
1.5  
V
V
IC=200mA, IB=2mA*  
IC=1A, IB=2mA*  
Base-Emitter  
Saturation Voltage  
2.0  
2.0  
V
IC=1A, IB=2mA*  
Base-Emitter  
Turn-On Voltage  
2.0  
2.0  
V
IC=1A, VCE=5V*  
Static Forward  
Current Transfer  
Ratio  
25K  
15K  
4K  
25K  
15K  
4K  
IC=200mA, VCE=5V*  
IC=500mA, VCE=5V*  
IC=1A, VCE=5V*  
40K  
10  
40K  
10  
Collector Base  
Capacitance  
CCB  
pF  
VCB=10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3-7  

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