2N6718

更新时间： 2024-02-24 06:01:11

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描述
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

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技术参数
数据手册

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2N6718 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.63
Base Number Matches：	1

2N6718 数据手册

NPN SILICON PLANAR

2N6716

2N6717

2N6718

MEDIUM POWER TRANSISTORS

ISSUE 1 MARCH 94

FEATURES

100 Volt V_CEO

Gain of 20 at I_C= 0.5 Amp

P_tot=1 Watt

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL 2N6716

2N6717

2N6718

100

UNIT

Collector-Base Voltage

V_CBO

V_CEO

V_EBO

I_CM

Collector-Emitter Voltage

Emitter-Base Voltage

100

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb= 25°C

I_C

P_tot

°C

Operating and Storage Temperature Range T_j:T_stg

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL

2N6716

2N6717

2N6718

UNIT CONDITIONS.

MIN. MAX MIN. MAX MIN. MAX

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

100

I_C=0.1mA, I_E=0

Collector-Emitter

Breakdown Voltage

I_C=1mA, I_B=0*

I_E=1mA, I_C=0

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

V_CB=60V, I_E=0

V_CB=80V, I_E=0

V_CB=100V, I_E=0

µA

Emitter Cut-Off

Current

I_EBO

V_EB=5V, I_C=0

µA

Collector-Emitter

Saturation Voltage

V_CE(sat)

V_BE(on)

h_FE

0.5

0.35

0.5

0.35

0.5

0.35

I_C=250mA, I_B=10mA*

I_C=250mA,I_B=25mA*

Base-Emitter

Turn-On Voltage

1.2

IC=250mA, V_CE=1V*

Static Forward

Current Transfer

Ratio

250 50

I_C=50mA, V_CE=1V*

I_C=250mA, V_CE=1V*

I_C=500mA, V_CE=1V*

250

Transition

Frequency

f_T

500 50

500 MHz I_C=50mA, V_CE=10V

Collector Base

Capacitance

C_CB

30 pF V_CE=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

3-6

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