DATA SHEET
SEMICONDUCTOR
5.0SMCJ Series
Surface Mount
Transient Voltage Suppressors
Working Voltage: 11 to 440 V
Peak Pulse Power: 5000 W
SMC/ DO-214AB
0.126 3.16
0.114 2.86
[
]
Features
ϥ
Glass passivated chip
0.245 6.15
0.22 5.52
[
]
ϥ
5000 W peak pulse power capability with a
10/1000 ȝs waveform, repetitive rate (duty
cycle):0.01 %
0.28 7.02
0.26 6.52
ϥ
ϥ
ϥ
ϥ
ϥ
Low leakage
[ ]
Uni and Bidirectional unit
Excellent clamping capability
Very fast response time
RoHS compliant
0.012 0.30
0.006 0.15
[
]
0.103 2.59
0.079 1.98
[
]
Mechanical Data
0.06 1.51
0.03 0.75
0.008 0.20
0.00
[
]
ϥ
ϥ
ϥ
Case: Molded plastic
0
[ ]
0.32 8.02
0.305 7.64
Epoxy: UL 94V-0 rate flame retardant
[
]
Lead: Solderable per MIL-STD-750, method
2026
Dimensions : inch [ mm ]
ϥ
ϥ
Polarity: Color band denotes cathode end
except Bipolar
Mounting position: Any
Maximum Ratings(TA=25к unless otherwise noted)
Value
5000
UNIT
W
Parameter
Symbol
PPP
Peak power dissipation with a 10/1000ȝs waveform(1)
Peak pulse current wih a 10/1000ȝs waveform(1)
Power dissipation on infinite heatsink at TL = 75 °C
Peak forward surge current, 8.3 ms single half sine-
IPP
PD
See Next Table
6.5
A
W
IFSM
300
A
wave unidirectional only(2)
Maximum instantaneous forward voltage at 100 A for
unidirectional only(3)
VF
3.5/5.0
V
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
Note:
(1)Non-repetitive current pulse per Fig.5 and derated above TA= 25 °C per Fig.1
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3)VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V
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1
REV.02 20130822