2N4003K
3 DRAIN
N-Channel Enhancement
Mode Power MOSFET
DRAIN CURRENT
0.5 AMPERES
1
GATE
P b
Lead(Pb)-Free
*
DRAIN SOUCE VOLTAGE
30 VOLTAGE
* Gate
Pretection
Diode
Features:
2
SOURCE
* Low Gate Voltage Threshold Vgs(th)
to Facilitate Drive Circuit Design.
* Low Gate Charge for Fast Switching.
* ESD Protected Gate.
3
* Minimum Breakdown Voltage Rating of 30V.
1
2
Application:
* Level Shifters
* Level Switches
SOT-23
* Low Side Load Switches
* Portable Applications
Maximum Ratings(TA=25℃ Unless Otherwise Specified)
Rating
Symbol
Value
30
Unit
Drain-Source Voltage
VDS
VGS
V
20
Gate-Source Voltage
1 ,Steady State
(TA=25°C)
(TA=85°C)
Continuous Drain Current
0.5
ID
PD
ID
A
W
A
0.37
0.69
Power Dissipation1
,Steady State
,t<10s
Continuous Drain Current1
(TA=25°C)
(TA=85°C)
0.56
0.40
0.83
Power Dissipation1
W
A
PD
,t<5s
IDM
1.7
Pulsed Drain Current
Maximum Junction-ambient
,Steady State1
,t<10s1
180
150
300
RθJA
°C/W
,Steady State2
Operating Junction Temperature Range
Storage Temperature Range
+150
-55~+150
1.0
°C
°C
A
TJ
Tstg
Source Current (Body Diode)
I S
Lead Temperature for Soldering Purposes (1/8” from case 10s)
260
°C
TL
Note: 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Device Marking
2N4003K = TR8
WEITRON
http://www.weitron.com.tw
1/6
08-Sep-09