是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.2 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 12 V | 最大漏极电流 (Abs) (ID): | 2.5 A |
最大漏源导通电阻: | 0.1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 1 W | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
SI6943DQ-E3 | VISHAY | Transistor |
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SI6943DQ-T1 | VISHAY | Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal |
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SI6943DQ-T1-E3 | VISHAY | Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal |
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SI6946DQ | VISHAY | Dual N-Channel 2.5-V (G-S) MOSFET |
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SI6946DQ-E3 | VISHAY | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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SI6953DQ | FAIRCHILD | Dual 20V P-Channel PowerTrench MOSFET |
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