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SI4925DDY-T1-GE3 PDF预览

SI4925DDY-T1-GE3

更新时间: 2024-02-28 08:58:48
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
9页 177K
描述
Small Signal Field-Effect Transistor, 7.3A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SI4925DDY-T1-GE3 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:3.24
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):7.3 A最大漏源导通电阻:0.029 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI4925DDY-T1-GE3 数据手册

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New Product  
Si4925DDY  
Vishay Siliconix  
Dual P-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free  
I
D (A)d, e  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
TrenchFET® Power MOSFET  
0.029 at VGS = - 10 V  
0.041 at VGS = - 4.5 V  
- 8  
- 8  
100 % UIS Tested  
RoHS  
- 30  
15 nC  
COMPLIANT  
APPLICATIONS  
Load Switches  
- Notebook PCs  
- Desktop PCs  
- Game Stations  
S
1
S
2
SO-8  
S
G
S
D
1
1
2
3
4
8
7
6
5
1
1
2
2
G
G
2
1
D
1
D
2
G
D
2
Top View  
Ordering Information: Si4925DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
D
D
2
1
P-Channel MOSFET  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
VDS  
Limit  
- 30  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
- 8.0e  
- 8.0e  
- 7.3a, b  
- 5.9a, b  
T
C = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
A
- 32e  
- 4.1  
- 2.0a, b  
- 20  
IDM  
IS  
Pulsed Drain Current  
T
C = 25 °C  
A = 25 °C  
Continuous Source-Drain Diode Current  
T
IAS  
Avalanche Current  
L = 0.1 mH  
EAS  
Single-Pulse Avalanche Energy  
20  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
5.0  
3.2  
PD  
Maximum Power Dissipation  
2.5a, b  
1.6a, b  
- 55 to 150  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
RthJF  
Typical  
38  
Maximum  
Unit  
Maximum Junction-to-Ambienta, c  
t 10 s  
Steady State  
50  
25  
°C/W  
Maximum Junction-to-Foot  
20  
Notes:  
a. Surface mounted on 1" x 1" FR4 board.  
b. t = 10 s.  
c. Maximum under Steady State conditions is 85 °C/W.  
d. Based on TC = 25 °C.  
e. Limited by package.  
Document Number: 68969  
S-82574-Rev. A, 27-Oct-08  
www.vishay.com  
1

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