5秒后页面跳转
SI4473DY-T1-E3 PDF预览

SI4473DY-T1-E3

更新时间: 2024-02-21 03:50:20
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管开关光电二极管
页数 文件大小 规格书
4页 58K
描述
P-Channel 14-V (D-S) MOSFET

SI4473DY-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:14 V
最大漏极电流 (Abs) (ID):9 A最大漏极电流 (ID):9 A
最大漏源导通电阻:0.011 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI4473DY-T1-E3 数据手册

 浏览型号SI4473DY-T1-E3的Datasheet PDF文件第2页浏览型号SI4473DY-T1-E3的Datasheet PDF文件第3页浏览型号SI4473DY-T1-E3的Datasheet PDF文件第4页 
Si4473DY  
Vishay Siliconix  
P-Channel 14-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
APPLICATION  
0.011 @ V = 4.5 V  
13  
11  
GS  
14  
D Battery Switch for Portable Equipment  
0.016 @ V = 2.5  
V
GS  
SO-8  
S
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
Ordering Information: Si4473DY  
D
Si4473DY-T1 (with Tape and Reel)  
P-Channel MOSFET  
Si4473DY—E3 (Lead (Pb)-Free)  
Si4473DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
14  
DS  
V
V
GS  
"12  
T
= 25_C  
= 70_C  
9  
7  
13  
10  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
DM  
50  
a
continuous Source Current (Diode Conduction)  
I
2.7  
3.0  
1.36  
1.5  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
1.9  
0.95  
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
33  
70  
16  
42  
84  
21  
a
Maximum Junction-to-Ambient  
R
R
thJA  
_C/W  
Maximum Junction-to-Foot (Drain)  
thJF  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71613  
S-50154—Rev. C, 31-Jan-05  
www.vishay.com  
1

与SI4473DY-T1-E3相关器件

型号 品牌 描述 获取价格 数据表
SI4477DY VISHAY P-Channel 20 V (D-S) MOSFET

获取价格

SI4477DY-T1-GE3 VISHAY P-Channel 20-V (D-S) MOSFET

获取价格

SI4480DY FAIRCHILD 80V N-Channel PowerTrench MOSFET

获取价格

SI4480DY VISHAY Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

获取价格

SI4480DYD84Z FAIRCHILD Small Signal Field-Effect Transistor, 7.6A I(D), 80V, 1-Element, N-Channel, Silicon, Metal

获取价格

SI4480DY-E3 VISHAY Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

获取价格