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SI3441DV-E3 PDF预览

SI3441DV-E3

更新时间: 2024-02-20 03:22:42
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 38K
描述
Transistor

SI3441DV-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.84
配置:Single最大漏极电流 (Abs) (ID):3.3 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e3
湿度敏感等级:1工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2 W子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

SI3441DV-E3 数据手册

 浏览型号SI3441DV-E3的Datasheet PDF文件第2页浏览型号SI3441DV-E3的Datasheet PDF文件第3页浏览型号SI3441DV-E3的Datasheet PDF文件第4页 
Si3441DV  
Vishay Siliconix  
P-Channel 2.5-V (G-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.10 @ V = –4.5 V  
–3.3  
–2.9  
GS  
–20  
0.135 @ V = –2.5 V  
GS  
(4) S  
TSOP-6  
Top View  
1
2
3
6
(3) G  
3 mm  
5
4
(1, 2, 5, 6) D  
2.85 mm  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
–20  
DS  
V
V
GS  
"8  
T
= 25_C  
= 70_C  
–3.3  
A
a, b  
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
–2.6  
–16  
A
Pulsed Drain Current  
I
DM  
a, b  
Continuous Source Current (Diode Conduction)  
I
S
–1.6  
T
= 25_C  
= 70_C  
2.0  
A
a, b  
Maximum Power Dissipation  
P
D
W
T
A
1.28  
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 5 sec  
62.5  
a
Maximum Junction-to-Ambient  
R
thJA  
_
C/W  
Steady State  
106  
Notes  
a. Surface Mounted on FR4 Board.  
b. t v 5 sec  
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm  
Document Number: 70191  
S-20212—Rev. F, 01-Apr-02  
www.vishay.com  
2-1  

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