SD211DE-2/213DE-2/215DE-2
Vishay Siliconix
N-Channel Lateral DMOS FETs
(Available Only In Extended Hi-Rel Flow)
PRODUCT SUMMARY
Part Number
V(BR)DS Min (V)
VGS(th) Max (V)
rDS(on) Max (W)
Crss Max (pF)
tON Max (ns)
SD211DE-2
SD213DE-2
SD215DE-2
30
10
20
1.5
1.5
1.5
45 @ V = 10 V
0.5
0.5
0.5
2
2
2
GS
45 @ V = 10 V
GS
45 @ V = 10 V
GS
FEATURES
BENEFITS
APPLICATIONS
D Ultra-High Speed Switching—tON: 1 ns
D Ultra-Low Reverse Capacitance: 0.2 pF
D Low Guaranteed rDS @ 5 V
D High Speed System Performance
D Low Insertion Loss at High Frequencies
D Low Transfer Signal Loss
D Fast Analog Switch
D Fast Sample-and-Holds
D Pixel-Rate Switching
D DAC Deglitchers
D Low Turn-On Threshold Voltage
D N-Channel Enhancement Mode
D Simple Driver Requirement
D Single Supply Operation
D High-Speed Driver
DESCRIPTION
The SD211DE-2 series consists of enhancement- mode
MOSFETs designed for high speed low-glitch switching in
audio, video, and high-frequency applications. The
SD211DE-2 may be used for "5-V analog switching or as a
high speed driver of the SD214DE-2. The SD214DE-2 is
normally used for "10-V analog switching. These MOSFETs
utilize lateral construction to achieve low capacitance and
ultra-fast switching speeds. An integrated Zener diode
provides ESD protection. These devices feature a poly-silicon
gate for manufacturing reliability.
The SD211DE/213DE/215DE are available only in the “–2”
extended hi-rel flow. The Vishay Siliconix “–2” flow complies
with the requirements of MIL-PRF-19500 for JANTX discrete
devices.
TO-206AF
(TO-72)
Body
Substrate
(Case)
S
1
2
4
3
D
G
Top View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Gate-Drain, Gate-Source Voltage
(SD211DE-2) . . . . . . . . . . . . . . –30/25 V
(SD213DE-2) . . . . . . . . . . . . . –15/25 V
(SD215DE-2) . . . . . . . . . . . . . –25/30 V
Drain-Substrate Voltage
(SD211DE-2) . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
(SD213DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 15 V
(SD215DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Gate-Substrate Voltage (Derate 3 mW/_C above 25_C)
Source-Substrate Voltage
(SD211DE-2) . . . . . . . . . . . . . . . . . . . . . . . . . 15 V
(SD213DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 15 V
(SD215DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 25 V
(SD211DE-2) . . . . . . . . . . . . . . . . . . . . . –0.3/25 V
(SD213DE-2) . . . . . . . . . . . . . . . . . . . . –0.3/25 V
(SD215DE-2) . . . . . . . . . . . . . . . . . . . . –0.3/30 V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Drain-Source Voltage
Source-Drain Voltage
(SD211DE-2) . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
(SD213DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 10 V
(SD215DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 20 V
1
Lead Temperature ( / ” from case for 10 seconds) . . . . . . . . . . . . . . . . 300_C
16
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 125_C
Power Dissipation (Derate 3 mW/_C above 25_C) . . . . . . . . . . . . . . . . 300 mW
(SD211DE-2) . . . . . . . . . . . . . . . . . . . . . . . . . 10 V
(SD213DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 10 V
(SD215DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 20 V
Applications Information—See Applications Note AN502
Document Number: 70295
S-02889—Rev. G, 21-Dec-00
www.vishay.com
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