Datasheet > J107-E3

J107-E3

更新时间： 2024-02-07 00:50:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	48K
描述
Transistor

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技术参数
数据手册

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J107-E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.83	FET 技术：	JUNCTION
JESD-609代码：	e3	湿度敏感等级：	1
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.31 W	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

J107-E3 数据手册

J105/106/107

Vishay Siliconix

N-Channel JFETs

PRODUCT SUMMARY

Part Number

V_GS(off)(V)

r_DS(on)Max (ꢀ ) I_D(off)Typ (pA)

t_ONTyp (ns)

J105

J106

J107

–4.5 to –10

–2 to –6

–0.5 to –4.5

FEATURES

BENEFITS

APPLICATIONS

D Low On-Resistance: J105 < 3

D Fast Switching—t_ON: 14 ns

D Low Leakage: 10 pA

ꢀ

D Low Error Voltage

D Analog Switches

D Choppers

D High-Speed Analog Circuit Performance

D Negligible “Off-Error,” Excellent Accuracy

D Good Frequency Response

D Sample-and-Hold

D Normally “On” Switches

D Current Limiters

D Low Capacitance: 20 pF

D Low Insertion Loss

D Eliminates Additional Buffering

DESCRIPTION

The J105/106/107 are high-performance JFET analog

switches designed to offer low on-resistance and fast

switching. r_DS(on)<3 ꢀ is guaranteed for the J105 making this

device the lowest of any commercially available JFET.

The low cost TO-226AA (TO-92) plastic package is available

in a wide range of tape-and-reel options (see Packaging

Information). For similar products in TO-206AC (TO-52)

packaging, see the U290/291 data sheet.

TO-226AA

(TO-92)

Top View

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW

Notes

a. Derate 2.8 mW/_C above 25_C

Document Number: 70230

S-04028—Rev. D, 04-Jun-01

www.vishay.com

7-1

12 3 4 5 6

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