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J106-E3 PDF预览

J106-E3

更新时间: 2024-02-11 08:01:09
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 67K
描述
Transistor

J106-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.82FET 技术:JUNCTION
JESD-609代码:e3湿度敏感等级:1
最高工作温度:135 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.36 W子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
Base Number Matches:1

J106-E3 数据手册

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J105/106/107  
Vishay Siliconix  
N-Channel JFETs  
PRODUCT SUMMARY  
Part Number  
VGS(off) (V)  
rDS(on) Max () ID(off) Typ (pA)  
tON Typ (ns)  
J105  
J106  
J107  
–4.5 to –10  
–2 to –6  
3
6
8
10  
10  
10  
14  
14  
14  
–0.5 to –4.5  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low On-Resistance: J105 < 3  
D Fast Switching—tON: 14 ns  
D Low Leakage: 10 pA  
D Low Error Voltage  
D Analog Switches  
D Choppers  
D High-Speed Analog Circuit Performance  
D Negligible “Off-Error,” Excellent Accuracy  
D Good Frequency Response  
D Sample-and-Hold  
D Normally “On” Switches  
D Current Limiters  
D Low Capacitance: 20 pF  
D Low Insertion Loss  
D Eliminates Additional Buffering  
DESCRIPTION  
The J105/106/107 are high-performance JFET analog  
switches designed to offer low on-resistance and fast  
switching. rDS(on) <3 is guaranteed for the J105 making this  
device the lowest of any commercially available JFET.  
The low cost TO-226AA (TO-92) plastic package is available  
in a wide range of tape-and-reel options (see Packaging  
Information). For similar products in TO-206AC (TO-52)  
packaging, see the U290/291 data sheet.  
TO-226AA  
(TO-92)  
1
2
3
D
S
G
Top View  
ABSOLUTE MAXIMUM RATINGS  
a
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW  
Notes  
a. Derate 2.8 mW/_C above 25_C  
Document Number: 70230  
S-04028—Rev. D, 04-Jun-01  
www.vishay.com  
7-1  

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