5秒后页面跳转
BZD27C56P PDF预览

BZD27C56P

更新时间: 2024-01-17 03:22:39
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管测试
页数 文件大小 规格书
7页 239K
描述
Zener Diodes with Surge Current Specification

BZD27C56P 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PDSO-F2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.13
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:R-PDSO-F2
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.8 W标称参考电压:56 V
表面贴装:YES技术:ZENER
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:5%
工作测试电流:10 mABase Number Matches:1

BZD27C56P 数据手册

 浏览型号BZD27C56P的Datasheet PDF文件第2页浏览型号BZD27C56P的Datasheet PDF文件第3页浏览型号BZD27C56P的Datasheet PDF文件第4页浏览型号BZD27C56P的Datasheet PDF文件第5页浏览型号BZD27C56P的Datasheet PDF文件第6页浏览型号BZD27C56P的Datasheet PDF文件第7页 
BZD27C3V6P to BZD27C200P  
Vishay Semiconductors  
Zener Diodes with Surge Current Specification  
Features  
• Sillicon Planar Zener Diodes  
• Low profile surface-mount package  
• Zener and surge current specification  
• Low leakage current  
e3  
17249  
• Excellent stability  
• High temperature soldering:  
260 °C/10 sec. at terminals  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Packaging codes/options:  
GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box  
GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box  
Mechanical Data  
Case: JEDEC DO-219AB (SMF ) Plastic case  
Weight: approx. 15 mg  
®
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Power dissipation  
Test condition  
TL = 80 °C  
A = 25 °C  
Symbol  
Ptot  
Value  
2.3  
Unit  
W
0.81)  
300  
T
Ptot  
W
W
100 µs square pulse2)  
Non-repetitive peak pulse power  
dissipation  
PZSM  
10/1000 µs waveform (BZD27-  
C7V5P to BZD27-C100P)2)  
10/1000 µs waveform (BZD27-  
C110P to BZD27-C200P)2)  
PRSM  
PRSM  
150  
100  
W
W
1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (40 µm thick)  
2) TJ = 25 °C prior to surge  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
180  
Unit  
K/W  
Thermal resistance junction to ambient air1)  
Thermal resistance junction to lead  
RthJL  
Tj  
30  
150  
K/W  
°C  
Maximum junction temperature  
Storage temperature range  
TS  
- 55 to + 150  
°C  
1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (40 µm thick)  
Electrical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Forward voltage  
Test condition  
IF = 0.2 A  
Symbol  
VF  
Min  
Typ.  
Max  
1.2  
Unit  
V
Document Number 85810  
Rev. 1.8, 13-Apr-05  
www.vishay.com  
1

与BZD27C56P相关器件

型号 品牌 描述 获取价格 数据表
BZD27-C56P VISHAY Zener Diodes

获取价格

BZD27C56P-E3-08 VISHAY DIODE ZENER 800MW SMF DO219

获取价格

BZD27C56P-E3-18 VISHAY DIODE ZENER 800MW SMF DO219

获取价格

BZD27C56P-G1 VISHAY DIODE 56 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, PLASTIC, SMF

获取价格

BZD27C56P-G2 VISHAY DIODE 56 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, PLASTIC, SMF

获取价格

BZD27C56PGS08 VISHAY DIODE 56 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, ROHS COMPLIA

获取价格