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AZ23C12-V-G PDF预览

AZ23C12-V-G

更新时间: 2024-02-21 05:55:43
品牌 Logo 应用领域
威世 - VISHAY 稳压二极管齐纳二极管测试光电二极管
页数 文件大小 规格书
8页 116K
描述
Small Signal Zener Diodes, Dual

AZ23C12-V-G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.13配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:20 ΩJESD-30 代码:R-PDSO-G3
膝阻抗最大值:90 Ω湿度敏感等级:1
元件数量:2端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.2 W
标称参考电压:12 V表面贴装:YES
技术:ZENER端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
电压温度Coeff-Max:9 mV/ °C最大电压容差:5%
工作测试电流:5 mA

AZ23C12-V-G 数据手册

 浏览型号AZ23C12-V-G的Datasheet PDF文件第2页浏览型号AZ23C12-V-G的Datasheet PDF文件第3页浏览型号AZ23C12-V-G的Datasheet PDF文件第4页浏览型号AZ23C12-V-G的Datasheet PDF文件第5页浏览型号AZ23C12-V-G的Datasheet PDF文件第6页浏览型号AZ23C12-V-G的Datasheet PDF文件第7页 
AZ23-V-G-Series  
Vishay Semiconductors  
www.vishay.com  
Small Signal Zener Diodes, Dual  
FEATURES  
• Dual silicon planar Zener diodes, common  
anode  
1
2
• The Zener voltages are graded according to the  
international E 24 standard  
• The parameters are valid for both diodes in one  
case. VZ and Rzj of the two diodes in one case  
is 5 %  
3
20456  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
PRIMARY CHARACTERISTICS  
Note  
PARAMETER  
VZ range nom.  
Test current IZT  
VZ specification  
Int. construction  
VALUE  
2.7 to 51  
5
UNIT  
V
** Please see document “Vishay Material Category Policy”:  
www.vishay.com/doc?99902  
mA  
Pulse current  
Dual  
ORDERING INFORMATION  
DEVICE NAME  
ORDERING CODE  
AZ23-V-G-series-18  
AZ23-V-G-series-08  
TAPED UNITS PER REEL  
10 000 (8 mm tape on 13" reel)  
3000 (8 mm tape on 7" reel)  
MINIMUM ORDER QUANTITY  
AZ23-V-G-series  
10 000  
15 000  
AZ23-V-G-series  
PACKAGE  
MOLDING COMPOUND MOISTURE SENSITIVITY  
SOLDERING  
CONDITIONS  
PACKAGE NAME  
WEIGHT  
8.1 mg  
FLAMMABILITY RATING  
LEVEL  
MSL level 1  
SOT-23  
UL 94 V-0  
260 °C/10 s at terminals  
(according J-STD-020)  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Device on fiberglass substrate,  
see layout on page 6  
Power dissipation  
Ptot  
300  
420  
mW  
Device on fiberglass substrate,  
see layout on page 6  
Junction to ambient air  
RthJA  
K/W  
Tj  
Tstg  
IZ  
Junction temperature  
Storage temperature range  
Zener current  
150  
°C  
°C  
- 65 to + 150  
Ptot/VZ  
mA  
Rev. 1.2, 31-Aug-11  
Document Number: 85867  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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