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2N6660JANTX PDF预览

2N6660JANTX

更新时间: 2024-01-10 23:54:23
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关
页数 文件大小 规格书
6页 129K
描述
N-Channel 60 V (D-S) MOSFET

2N6660JANTX 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:CYLINDRICAL, O-MBCY-W3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.88
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):1.1 A
最大漏源导通电阻:3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):3 A
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

2N6660JANTX 数据手册

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2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV  
www.vishay.com  
Vishay Siliconix  
N-Channel 60 V (D-S) MOSFET  
FEATURES  
• Military Qualified  
PRODUCT SUMMARY  
VDS (V)  
60  
• Low On-Resistence: 1.3  
• Low Threshold: 1.7 V  
• Low Input Capacitance: 35 pF  
RDS(on) () at VGS = 10 V  
3
Configuration  
Single  
• Fast Switching Speed: 8 ns  
• Low Input and Output Leakage  
TO-205AD  
(TO-39)  
BENEFITS  
• Guaranteed Reliability  
• Low Offset Voltage  
• Low-Voltage Operation  
• Easily Driven Without Buffer  
• High-Speed Circuits  
• Low Error Voltage  
S
1
2
3
APPLICATIONS  
• Hi-Rel Systems  
G
D
• Direct Logic-Level Interface: TTL/CMOS  
Top View  
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,  
Memories, Transistors, etc.  
• Battery Operated Systems  
• Solid-State Relays  
ORDERING INFORMATION  
DESCRIPTION/DSCC  
PART NUMBER  
VISHAY ORDERING  
PART NUMBER  
PART  
PACKAGE  
Commercial  
2N6660  
2N6660  
Commercial, Lead (Pb)-free  
2N6660-E3  
www.vishay.com/doc?67884  
See -2 Flow Document  
2N6660-2  
2N6660-2  
JANTX2N6660 (std Au leads)  
JANTX2N6660 (with solder)  
JANTX2N6660P (with PIND)  
JANTXV2N6660 (std Au leads)  
JANTXV2N6660P (with PIND)  
2N6660JTX02  
2N6660JTXL02  
2N6660JTXP02  
2N6660JTXV02  
2N6660JTVP02  
TO-205AD  
(TO-39)  
2N6660JANTX  
2N6660JANTXV  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
60  
20  
UNIT  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
T
C = 25 °C  
0.99  
0.62  
Continuous Drain Current (TJ = 150 °C)  
ID  
TC = 100 °C  
A
Pulsed Drain Currenta  
IDM  
PD  
3
TC = 25 °C  
TA = 25 °C  
6.25  
Maximum Power Dissipation  
W
0.725  
170  
Thermal Resistance, Junction-to-Ambientb  
Thermal Resistance, Junction-to-Case  
RthJA  
RthJC  
°C/W  
°C  
20  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
Notes  
a. Pulse width limited by maximum junction temperature.  
b. Not required by military spec.  
S11-1542-Rev. D, 01-Aug-11  
Document Number: 70223  
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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