5秒后页面跳转
2N4341 PDF预览

2N4341

更新时间: 2024-01-07 17:03:44
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管
页数 文件大小 规格书
6页 53K
描述
N-Channel JFETs

2N4341 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.38其他特性:LOW NOISE
配置:SINGLE最小漏源击穿电压:50 V
FET 技术:JUNCTION最大反馈电容 (Crss):2 pF
JEDEC-95代码:TO-18JESD-30 代码:O-MBCY-W3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2N4341 数据手册

 浏览型号2N4341的Datasheet PDF文件第2页浏览型号2N4341的Datasheet PDF文件第3页浏览型号2N4341的Datasheet PDF文件第4页浏览型号2N4341的Datasheet PDF文件第5页浏览型号2N4341的Datasheet PDF文件第6页 
2N4338/4339/4340/4341  
Vishay Siliconix  
N-Channel JFETs  
PRODUCT SUMMARY  
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA)  
2N4338  
2N4339  
2N4340  
2N4341  
–0.3 to –1  
–0.6 to –1.8  
–1 to –3  
–50  
–50  
–50  
–50  
0.6  
0.8  
1.3  
2
0.6  
1.5  
3.6  
9
–2 to –6  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low Cutoff Voltage: 2N4338 <1 V  
D High Input Impedance  
D Full Performance from Low-Voltage  
D High-Gain, Low-Noise Amplifiers  
Power Supply: Down to 1 V  
D Low-Current, Low-Voltage  
D Low Signal Loss/System Error  
Battery-Powered Amplifiers  
D Very Low Noise  
D High System Sensitivity  
D Infrared Detector Amplifiers  
D High Gain: AV = 80 @ 20 mA  
D High-Quality Low-Level Signal  
D Ultrahigh Input Impedance  
Amplification  
Pre-Amplifiers  
DESCRIPTION  
The 2N4338/4339/4340/4341 n-channel JFETs are designed  
for sensitive amplifier stages at low- to mid-frequencies. Low  
cut-off voltages accommodate low-level power supplies and  
low leakage for improved system accuracy.  
The TO-206AA (TO-18) package is hermetically sealed and  
suitable for military processing (see Military Information). For  
similar products in TO-226AA (TO-92) and TO-236 (SOT-23)  
packages, see the J/SST201 series data sheet.  
TO-206AA  
(TO-18)  
S
1
2
3
D
G and Case  
Top View  
ABSOLUTE MAXIMUM RATINGS  
1
Gate-Source/Gate-DrainVoltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V  
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 175_C  
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C  
16  
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW  
Notes  
a. Derate 2 mW/_C above 25_C  
For applications information see AN102 and AN106.  
Document Number: 70240  
S-04028—Rev. E, 04-Jun-01  
www.vishay.com  
7-1  

与2N4341相关器件

型号 品牌 描述 获取价格 数据表
2N4341G VISHAY Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206A

获取价格

2N4341LEADFREE CENTRAL Small Signal Field-Effect Transistor, 50V, 1-Element, N-Channel, Silicon, Junction FET, TO

获取价格

2N4342 NJSEMI LOW NOISE VOLTAGE

获取价格

2N4343 NJSEMI LOW NOISE VOLTAGE

获取价格

2N4346 NJSEMI Trans GP BJT NPN 120V 10A 3-Pin(2+Tab) TO-3

获取价格

2N4347 COMSET HIGH POWER INDUSTRIAL TRANSISTORS

获取价格