2KBP01PBF

更新时间： 2024-01-01 22:55:12

品牌	Logo	应用领域
威世 - VISHAY		整流二极管桥式整流二极管
页数	文件大小	规格书
2页	82K
描述
Bridge Rectifier Diode, 1 Phase, 2A, 100V V(RRM), Silicon,

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2KBP01PBF 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	S-PDIP-W4
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	8.04
其他特性：	LEAKAGE CURRENT IS NOT AT 25 DEG C	配置：	BRIDGE, 4 ELEMENTS
二极管元件材料：	SILICON	二极管类型：	BRIDGE RECTIFIER DIODE
JESD-30 代码：	S-PDIP-W4	最大非重复峰值正向电流：	63 A
元件数量：	4	相数：	1
端子数量：	4	最大输出电流：	2 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	SQUARE
封装形式：	IN-LINE	峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified	最大重复峰值反向电压：	100 V
表面贴装：	NO	端子形式：	WIRE
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
Base Number Matches：	1

2KBP01PBF 数据手册

2KBP005M THRU 2KBP10M SERIES

3N253 THRU 3N259

GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

Reverse Voltage - 50 to 1000 Volts

Forward Current - 2.0 Amperes

FEATURES

Case Style KBPM

♦ Plastic package has Underwriters Laboratory Flammability

0.600 (15.24)

0.560 (14.22)

0.125 x 45^o

(3.2)

Classification 94V-0

♦ This series is UL listed under the Recognized Component

Index, file number E54214

♦ Glass passivated chip junctions

0.460 (11.68)

0.420 (10.67)

0.500 (12.70)

0.460 (11.68)

♦ Typical I less than 0.1µA

♦ High case dielectric strength

0.50

(12.7)

MIN.

(15.2)

MIN.

♦ Ideal for printed circuit boards

♦ High temperature soldering guaranteed:

260°C/10 seconds at 5 lbs. (2.3kg) tension

0.060

(1.52)

0.034 (8.6)

0.028 (7.6)

DIA.

0.160 (4.1)

0.140 (3.6)

MECHANICAL DATA

Case: Molded plastic body over passivated junctions

Terminals: Plated leads solderable per MIL-STD-750,

Method 2026

0.105 (2.67)

0.085 (2.16)

0.200 (5.08)

0.180 (4.57)

Polarity shown on front side of case: positive lead by beveled corner

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight: 0.06 ounce, 1.7 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

2KBP

005M

3N253

2KBP

01M

3N254

2KBP

02M

3N255

2KBP

04M

3N256

2KBP

06M

3N257

2KBP

08M

3N258

2KBP

10M

3N259

SYMBOLS

UNITS

* Maximum repetitive peak reverse voltage

* Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000 Volts

700 Volts

* Maximum DC blocking voltage

100

1000 Volts

* Maximum average forward output rectified current

at T_A=55°C

I_(AV)

2.0

Amps

* Peak forward surge current single half sine-wave

superimposed on rated load (JEDEC Method) T_J=150°C

I_FSM

I²t

60.0

15.0

1.1

Amps

A²sec

Volts

Rating for fusing (t < 8.3ms)

* Maximum instantaneous forward voltage drop

per leg at 3.14A

V_F

* Maximum DC reverse current

at rated DC blocking voltage per leg

T_A=25°C

T_A=125°C

5.0

500.0

I_R

µA

Typical junction capacitance per leg _{(NOTE 1)}

Typical thermal resistance per leg _{(NOTE 2)}

C_J

25.0

R_ΘJA

R_ΘJL

30.0

11.0

°C/W

°C

* Operating junction and storage temperature range

T_J, T_STG

-55 to +165

NOTES:

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts

(2) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.47 x 0.47” (12 x 12mm) copper pads

* JEDEC registered values

4/98

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