20TQSPBF

更新时间： 2024-01-22 21:22:09

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	121K
描述
Schottky Rectifier, 20 A

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技术参数
数据手册

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20TQSPBF 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8532.24.0060	风险等级：	5.66
Is Samacsys：	N	其他特性：	RATED AC VOLTAGE(V): 400
电容器类型：	CERAMIC CAPACITOR	介电材料：	CERAMIC
安装特点：	THROUGH HOLE MOUNT	多层：	No
端子数量：	2	最高工作温度：	125 °C
最低工作温度：	-30 °C	封装形状：	DISK PACKAGE
包装方法：	BULK	表面贴装：	NO
端子形状：	WIRE	Base Number Matches：	1

20TQSPBF 数据手册

20TQ...SPbF

Vishay High Power Products

Schottky Rectifier, 20 A

FEATURES

• 150 °C T_Joperation

Available

• Low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy

Base

cathode

RoHS*

COMPLIANT

encapsulation for enhanced mechanical strength and

moisture resistance

• Guard ring for enhanced ruggedness and long term

reliability

N/C

D²PAK

Anode

• Lead (Pb)-free (“PbF” suffix)

• Designed and qualified for Q101 level

DESCRIPTION

PRODUCT SUMMARY

The 20TQ.. Schottky rectifier series has been optimized for

very low forward voltage drop, with moderate leakage. The

proprietary barrier technology allows for reliable operation up

to 150 °C junction temperature. Typical applications are in

switching power supplies, converters, freewheeling diodes,

and reverse battery protection.

I_F(AV)

20 A

35 to 45 V

V_R

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

Range

35 to 45

1800

t_p= 5 µs sine

20 Apk, T_J= 125 °C

Range

V_F

0.51

T_J

- 55 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

20TQ035SPbF

20TQ040SPbF

20TQ045SPbF

UNITS

Maximum DC reverse voltage

V_R

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

See fig. 5

I_F(AV)

50 % duty cycle at T_C= 116 °C, rectangular waveform

Maximum peak one cycle

non-repetitive surge current

See fig. 7

Following any rated load

condition and with rated

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse

1800

I_FSM

400

_RRMapplied

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 4 A, L = 3.40 mH

Current decaying linearly to zero in 1 µs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94168

Revision: 14-Aug-08

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

12 3 4 5 6

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