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10ETS12PBF PDF预览

10ETS12PBF

更新时间: 2024-01-05 12:45:14
品牌 Logo 应用领域
威世 - VISHAY 整流二极管高压局域网高压大电源高功率电源
页数 文件大小 规格书
7页 186K
描述
Input Rectifier Diode, 10 A

10ETS12PBF 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:TO-263包装说明:SMD-220, D2PAK-3
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.10.00.80风险等级:5.23
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:1200 V
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

10ETS12PBF 数据手册

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10ETS08PbF, 10ETS12PbF High Voltage Series  
Vishay Semiconductors  
Input Rectifier Diode, 10 A  
FEATURES  
• Compliant to RoHS directive 2002/95/EC  
Base  
cathode  
• Designed and qualified for industrial level  
2
APPLICATIONS  
• Input rectification  
• Vishay Semiconductors switches and output rectifiers  
which are available in identical package outlines  
1
3
TO-220AC  
Cathode Anode  
DESCRIPTION  
The 10ETS..PbF rectifier series has been optimized for very  
low forward voltage drop, with moderate leakage.  
PRODUCT SUMMARY  
VF at 10 A  
< 1.1 V  
200 A  
IFSM  
The glass passivation technology used has reliable  
operation up to 150 °C junction temperature.  
VRRM  
800 V/1200 V  
OUTPUT CURRENT IN TYPICAL APPLICATIONS  
APPLICATIONS  
SINGLE-PHASE BRIDGE  
THREE-PHASE BRIDGE  
UNITS  
Capacitive input filter TA = 55 °C, TJ = 125 °C  
common heatsink of 1 °C/W  
12.0  
16.0  
A
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
10  
UNITS  
Sinusoidal waveform  
A
V
800/1200  
200  
A
VF  
10 A, TJ = 25 °C  
1.1  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
V
RRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
10ETS08PbF  
10ETS12PbF  
800  
900  
0.5  
1200  
1300  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
IF(AV)  
TC = 105 °C, 180° conduction half sine wave  
10  
170  
200  
130  
145  
1450  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
Maximum I2t for fusing  
I2t  
A2s  
Maximum I2t for fusing  
I2t  
A2s  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94337  
Revision: 22-Jul-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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