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10ETF12SSTRLPBF PDF预览

10ETF12SSTRLPBF

更新时间: 2024-01-22 02:48:28
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网软恢复二极管快速软恢复二极管
页数 文件大小 规格书
8页 838K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 1200V V(RRM), Silicon, ROHS COMPLIANT, SMD-220, D2PAK-3

10ETF12SSTRLPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AC包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.29其他特性:FREE WHEELING DIODE
应用:FAST SOFT RECOVERY HIGH POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.33 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:185 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1200 V
最大反向恢复时间:0.31 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

10ETF12SSTRLPBF 数据手册

 浏览型号10ETF12SSTRLPBF的Datasheet PDF文件第2页浏览型号10ETF12SSTRLPBF的Datasheet PDF文件第3页浏览型号10ETF12SSTRLPBF的Datasheet PDF文件第4页浏览型号10ETF12SSTRLPBF的Datasheet PDF文件第5页浏览型号10ETF12SSTRLPBF的Datasheet PDF文件第6页浏览型号10ETF12SSTRLPBF的Datasheet PDF文件第7页 
10ETF...PbF Soft Recovery Series  
Vishay High Power Products  
Fast Soft Recovery  
Rectifier Diode, 10 A  
FEATURES/DESCRIPTION  
The 10ETF...PbF fast soft recovery rectifier  
series has been optimized for combined short  
reverse recovery time and low forward voltage  
drop.  
Pb-free  
Base  
cathode  
2
Available  
RoHS*  
COMPLIANT  
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
1
3
This product series has been designed and qualified for  
industrial level and lead (Pb)-free.  
TO-220AC  
Cathode Anode  
APPLICATIONS  
PRODUCT SUMMARY  
• Output rectification and freewheeling in inverters,  
choppers and converters  
VRRM  
VF at 10 A  
trr  
1000 to 1200 V  
< 1.33 V  
• Input rectifications where severe restrictions on conducted  
EMI should be met  
80 ns  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
VRRM  
IF(AV)  
IFSM  
trr  
CHARACTERISTICS  
VALUES  
1000 to 1200  
10  
UNITS  
V
Sinusoidal waveform  
A
160  
1 A, 100 A/µs  
80  
ns  
V
VF  
10 A, TJ = 25 °C  
1.33  
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK REVERSE  
V
RSM, MAXIMUM NON-REPETITIVE  
PEAK REVERSE VOLTAGE  
V
IRRM  
AT 150 °C  
mA  
PART NUMBER  
VOLTAGE  
V
10ETF10  
10ETF12  
1000  
1200  
1100  
1200  
4
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
10  
UNITS  
Maximum average forward current  
IF(AV)  
TC = 125 °C, 180° conduction half sine wave  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 to 10 ms, no voltage reapplied  
160  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
185  
128  
Maximum I2t for fusing  
I2t  
A2s  
180  
Maximum I2t for fusing  
I2t  
1800  
A2s  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94092  
Revision: 15-Apr-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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