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10BQ100M PDF预览

10BQ100M

更新时间: 2024-02-24 23:06:53
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 111K
描述
Schottky Rectifier, 1 A

10BQ100M 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.2
Is Samacsys:N其他特性:HIGH RELIABILITY, FREE WHEELING DIODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.89 V
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:38 A元件数量:1
端子数量:2最高工作温度:175 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:MATTE TIN端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

10BQ100M 数据手册

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VS-10BQ100-M3  
Vishay Semiconductors  
www.vishay.com  
Schottky Rectifier, 1 A  
FEATURES  
• Low forward voltage drop  
• Guard ring for enhanced ruggedness and long  
term reliability  
Cathode  
Anode  
• Small foot print, surface mountable  
• High frequency operation  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
PRODUCT SUMMARY  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
Package  
SMB  
1 A  
IF(AV)  
DESCRIPTION  
VR  
100 V  
0.59 V  
The VS-10BQ100-M3 surface mount Schottky rectifier has  
been designed for applications requiring low forward drop  
and very small foot prints on PC boards. Typical  
applications are in disk drives, switching power supplies,  
converters, freewheeling diodes, battery charging, and  
reverse battery protection.  
VF at IF  
IRM  
1 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Single die  
1.0 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
1
UNITS  
Rectangular waveform  
A
V
100  
tp = 5 μs sine  
1.0 Apk, TJ = 125 °C  
Range  
780  
A
VF  
0.59  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-10BQ100-M3  
UNITS  
Maximum DC reverse voltage  
VR  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TL = 143 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
IF(AV)  
1.0  
A
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
780  
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 0.5 A, L = 8 mH  
38  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
1.0  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.5  
Revision: 29-May-12  
Document Number: 93227  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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