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2N7002ZG-AE2-R PDF预览

2N7002ZG-AE2-R

更新时间: 2024-01-09 18:05:10
品牌 Logo 应用领域
友顺 - UTC 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
4页 179K
描述
300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET

2N7002ZG-AE2-R 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.54Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):0.3 A最大漏源导通电阻:7.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5 pF
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N7002ZG-AE2-R 数据手册

 浏览型号2N7002ZG-AE2-R的Datasheet PDF文件第2页浏览型号2N7002ZG-AE2-R的Datasheet PDF文件第3页浏览型号2N7002ZG-AE2-R的Datasheet PDF文件第4页 
UNISONIC TECHNOLOGIES CO., LTD  
2N7002Z  
Power MOSFET  
300mA, 60V N-CHANNEL  
ENHANCEMENT MODE  
POWER MOSFET  
„
DESCRIPTION  
The UTC 2N7002Z uses advanced technology to provide  
excellent RDS(ON), low gate charge and operation with low gate  
voltages. This device is suitable for use as a load switch or in  
PWM applications.  
„
FEATURES  
* RDS(ON) <7.5  
* Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF)  
* ESD Protected  
* Fast Switching Capability  
* Avalanche Energy Specified  
* Improved dv/dt Capability, High Ruggedness  
„
SYMBOL  
3.Drain  
2.Gate  
1.Source  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
2N7002ZG-AE2-R  
1
2
3
2N7002ZL-AE2-R  
SOT-23-3  
S
G
D
Tape Reel  
„
MARKING  
www.unisonic.com.tw  
Copyright © 2012 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R502-273.G  

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