是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | SOT-23 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.54 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 0.3 A | 最大漏源导通电阻: | 7.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 5 pF |
JEDEC-95代码: | TO-236 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N7002ZL-AE2-R | UTC | 300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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2N7002ZT | UTC | 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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2N7002ZT_12 | UTC | 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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2N7002ZTG-AN3-R | UTC | 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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2N7002ZTL-AN3-R | UTC | 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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2N7002ZW | UTC | 300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
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