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2N7002G-AE2-R PDF预览

2N7002G-AE2-R

更新时间: 2024-02-16 01:09:50
品牌 Logo 应用领域
友顺 - UTC 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
6页 281K
描述
0.3A, 60V N-CHANNEL POWER MOSFET

2N7002G-AE2-R 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.61配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):0.3 A
最大漏极电流 (ID):0.3 A最大漏源导通电阻:7.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5 pF
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2N7002G-AE2-R 数据手册

 浏览型号2N7002G-AE2-R的Datasheet PDF文件第2页浏览型号2N7002G-AE2-R的Datasheet PDF文件第3页浏览型号2N7002G-AE2-R的Datasheet PDF文件第4页浏览型号2N7002G-AE2-R的Datasheet PDF文件第5页浏览型号2N7002G-AE2-R的Datasheet PDF文件第6页 
UNISONIC TECHNOLOGIES CO., LTD  
2N7002  
Power MOSFET  
0.3A, 60V N-CHANNEL  
POWER MOSFET  
„
DESCRIPTION  
The UTC 2N7002 uses advanced technology to provide  
excellent RDS(ON), low gate charge and operation with low gate  
voltages. This device is suitable for use as a load switch or in PWM  
applications.  
„
FEATURES  
* High Density Cell Design for Low RDS(ON)  
* Voltage Controlled Small Signal Switch  
* Rugged and Reliable  
.
* High Saturation Current Capability  
„
SYMBOL  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
3
Lead Free  
Halogen Free  
1
2
2N7002L-AE2-R  
2N7002G-AE2-R  
SOT-23-3  
S
G
D
Tape Reel  
„
MARKING  
3P  
G: Halogen Free  
L: Lead Free  
www.unisonic.com.tw  
Copyright © 2012 Unisonic Technologies Co., Ltd  
1 of 6  
QW-R206-037,K  

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