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1N70-T92-B PDF预览

1N70-T92-B

更新时间: 2024-01-24 07:43:22
品牌 Logo 应用领域
友顺 - UTC 晶体小信号场效应晶体管开关
页数 文件大小 规格书
8页 213K
描述
1.2 Amps, 700 Volts N-CHANNEL MOSFET

1N70-T92-B 技术参数

生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-W3针数:3
Reach Compliance Code:compliant风险等级:5.57
Is Samacsys:N配置:SINGLE
最小漏源击穿电压:700 V最大漏极电流 (ID):1.2 A
最大漏源导通电阻:11.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):4 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

1N70-T92-B 数据手册

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UNISONIC TECHNOLOGIES CO., LTD  
1N70  
Power MOSFET  
1.2 Amps, 700 Volts  
N-CHANNEL MOSFET  
„
DESCRIPTION  
The UTC 1N70 is a high voltage MOSFET and is designed to  
have better characteristics, such as fast switching time, low gate  
charge, low on-state resistance and have a high rugged avalanche  
characteristics. This power MOSFET is usually used at high speed  
switching applications in power supplies, PWM motor controls, high  
efficient DC to DC converters and bridge circuits.  
„
FEATURES  
* RDS(ON) =11.5@VGS = 10V.  
*Pb-free plating product number: 1N70L  
* Ultra Low gate charge (typical 5.0nC)  
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)  
* Fast switching capability  
* Avalanche energy specified  
* Improved dv/dt capability, high ruggedness  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free Plating  
1
2
D
D
3
S
S
1N70-T92-B  
1N70-T92-K  
1N70L-T92-B  
1N70L-T92-K  
TO-92  
TO-92  
Tape Box  
Bulk  
G
G
www.unisonic.com.tw  
1 of 8  
Copyright © 2008 Unisonic Technologies Co., Ltd  
QW-R502-171,A  

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