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18N60L-T47-T PDF预览

18N60L-T47-T

更新时间: 2024-01-03 09:53:48
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
3页 143K
描述
POLARHV HIPERFET POWER MOSFET

18N60L-T47-T 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-247包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
HTS代码:8541.29.00.95风险等级:5.66
Is Samacsys:N雪崩能效等级(Eas):1000 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):18 A最大漏极电流 (ID):18 A
最大漏源导通电阻:0.4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):360 W
最大脉冲漏极电流 (IDM):45 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

18N60L-T47-T 数据手册

 浏览型号18N60L-T47-T的Datasheet PDF文件第2页浏览型号18N60L-T47-T的Datasheet PDF文件第3页 
UNISONIC TECHNOLOGIES CO., LTD  
18N60  
Preliminary  
Power MOSFET  
POLARHV HIPERFET POWER  
MOSFET  
„
DESCRIPTION  
The UTC 18N60 uses UTC’s advanced proprietary, planar  
1
stripe, DMOS technology to provide excellent RDS(ON), low gate  
charge and operation with low gate voltages. This device is  
suitable for use as a load switch or in PWM applications.  
TO-247  
„
FEATURES  
* RDS(ON) 400m@VGS = 10 V  
* Ultra low gate charge ( typical 50nC )  
* Low reverse transfer capacitance ( CRSS = typical 23pF )  
* Fast switching capability  
Lead-free:  
Halogen-free : 18N60G  
18N60L  
* Avalanche energy specified  
* Improved dv/dt capability, high ruggedness  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
TO-247  
Packing  
Tube  
Normal  
Lead Free  
Halogen Free  
1
2
3
18N60-T47-T  
18N60L-T47-T  
18N60G-T47-T  
G
D
S
www.unisonic.com.tw  
Copyright © 2008 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R502-221.Aa  

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