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11N40-TF3-T PDF预览

11N40-TF3-T

更新时间: 2024-01-26 02:13:45
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 189K
描述
400V N-CHANNEL MOSFET

11N40-TF3-T 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.64
Is Samacsys:N雪崩能效等级(Eas):520 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:400 V最大漏极电流 (ID):11.4 A
最大漏源导通电阻:0.48 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):46 A认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

11N40-TF3-T 数据手册

 浏览型号11N40-TF3-T的Datasheet PDF文件第2页浏览型号11N40-TF3-T的Datasheet PDF文件第3页浏览型号11N40-TF3-T的Datasheet PDF文件第4页浏览型号11N40-TF3-T的Datasheet PDF文件第5页浏览型号11N40-TF3-T的Datasheet PDF文件第6页 
UNISONIC TECHNOLOGIES CO., LTD  
11N40  
Power MOSFET  
400 V N-CHANNEL MOSFET  
„
DESCRIPTION  
The 11N40 uses UTC’s advanced proprietary, planar stripe,  
DMOS technology to provide excellent RDS(ON), low gate charge  
and operation with low gate voltages. This device is suitable for  
use as a load switch or in PWM applications.  
„
FEATURES  
* RDS(ON) = 0.48@VGS = 10 V  
* Ultra low gate charge ( typical 27 nC )  
* Low reverse transfer capacitance ( CRSS = typical 20 pF )  
* Fast switching capability  
* Avalanche energy specified  
* Improved dv/dt capability, high ruggedness  
„
SYMBOL  
11N40L  
11N40G  
2.Drain  
Lead-free:  
Halogen-free:  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
TO-220F  
Packing  
Tube  
Normal  
Lead Free Plating  
11N40L-TF3-T  
Halogen Free  
1
2
3
11N40-TF3-T  
11N40G-TF3-T  
G
D
S
www.unisonic.com.tw  
Copyright © 2008 Unisonic Technologies Co., Ltd  
1 of 6  
QW-R502-219.Aa  

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