5秒后页面跳转
TSS4B02G PDF预览

TSS4B02G

更新时间: 2024-01-14 10:13:58
品牌 Logo 应用领域
TSC 二极管局域网
页数 文件大小 规格书
2页 59K
描述
Single Phase 4.0 Amps. Glass Passivated Super Fast Bridge Rectifiers

TSS4B02G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSFM-T4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.65Is Samacsys:N
其他特性:UL RECOGNIZED最小击穿电压:100 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):0.98 VJESD-30 代码:R-PSFM-T4
湿度敏感等级:1最大非重复峰值正向电流:150 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:4 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.035 µs
子类别:Bridge Rectifier Diodes表面贴装:NO
端子面层:Pure Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

TSS4B02G 数据手册

 浏览型号TSS4B02G的Datasheet PDF文件第2页 
TSS4B01G THRU TSS4B03G  
Single Phase 4.0 Amps. Glass Passivated Super Fast Bridge Rectifiers  
Voltage Range  
50 to 200 Volts  
Current  
4.0 Amperes  
TS4B  
Features  
UL recognized file # E-96005  
Glass passivated junction  
Ideal for printed circuit board  
Reliable low cost construction  
Plastic material has Underwriters  
Laboratory Flammability Classification  
94V-0  
Low Forward Voltage Drop.  
High case dielectric strength of 2000VRMS  
Mechanical Data  
Case: Molded plastic  
Terminals: Leads solderable per MIL-  
STD-750, Method 2026  
Weight: 0.15 ounce, 4 grams  
Mounting torque: 5 in. lbs. max.  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Symbol  
TSS4B01G TSS4B02G TSS4B03G  
Type Number  
Units  
Maximum Recurrent Peak Reverse Voltage  
50  
35  
50  
100  
70  
100  
200  
140  
200  
V
V
V
VRRM  
VRMS  
VDC  
Maximum RMS Voltage  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
@TC=100OC  
4.0  
150  
0.98  
A
A
V
I(AV)  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated Load  
(JEDEC method )  
Maximum Instantaneous Forward Voltage  
@ 4.0A  
IFSM  
VF  
Maximum Reverse Recovery Time(Note 1)  
Trr  
35  
5.0  
500  
nS  
uA  
uA  
Maximum DC Reverse Current @ TA=25  
at Rated DC Blocking Voltage @ TA=125℃  
IR  
Typical Thermal Resistance (Note 2)  
Operating Temperature Range  
Storage Temperature Range  
/W  
RθJC  
TJ  
5.5  
-55 to +150  
-55 to + 150  
TSTG  
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.  
2. Thermal Resistance from Junction to Case with Device Mounted on 2” x 3” x 0.25” Al-Plate  
Heatsink.  
- 734 -  

与TSS4B02G相关器件

型号 品牌 描述 获取价格 数据表
TSS4B03G TSC Single Phase 4.0 Amps. Glass Passivated Super Fast Bridge Rectifiers

获取价格

TSS4B04G TSC Single Phase 4.0 Amps. Glass Passivated Super Fast Bridge Rectifiers

获取价格

TSS510A Galaxy Microelectronics 5A,100V, Surface Mount Schottky Barrier Rectifiers

获取价格

TSS510B Galaxy Microelectronics 5A,100V, Surface Mount Schottky Barrier Rectifiers

获取价格

TSS510BF Galaxy Microelectronics 5A,100V, Surface Mount Schottky Barrier Rectifiers

获取价格

TSS510C Galaxy Microelectronics 5A,100V, Surface Mount Schottky Barrier Rectifiers

获取价格