Datasheet > MMBT3904

MMBT3904

更新时间： 2024-02-22 21:05:49

品牌	Logo	应用领域
TSC		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	134K
描述
0.2 Watts NPN Plastic-Encapsulate Transistors

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技术参数
数据手册

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MMBT3904 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.58
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MMBT3904 数据手册

MMBT3904

0.2 Watts NPN Plastic-Encapsulate Transistors

RoHS

COMPLIANCE

SOT-23

Features

As complementary type, the PNP transistor

MMBT3906 is recommended

Epitaxial planar die construction

Marking: 1AM

Dimensions in inches and (millimeters)

Maximum Ratings T =25 ^oC unless otherwise specified

Value

0.2

Type Number

Symbol

V_CBO

V_CEO

V_EBO

I_C

Units

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current - continuous

Collector Power dissipation

ELECTRICAL CHARACTERISTICS

P_C

Parameter

Collector-base breakdown voltage

Symbol

V_(BR)CBO

V_(BR)CEO

V_BE(ON)

I_CBO

MIN

MAX

Units

I_C=10uA, I_e=0

Collector-emitter breakdown voltage I_C=1mA, I_B=0

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

I_E=10uA, I_C=0

V_CB=60V I_E=0

0.1

400

V_CE=30V V_BE(off)=3V

V_EB=5V I_C=0

I_CEO

I_EEO

V_CE=1V I_C=10mA

V_CE=1V I_C=50mA

V_CE=1V I_C=100mA

I_C=50mA, I_B=5mA

h_FE(1)

100

h_FE(2)

h_FE(3)

0.3

V_CE(sat)

V_BE(sat)

0.95

Transition frequency V_CE=20V I_C=10mA f=100MHz

f_T

250

MHz

^oC

Delay time

Rise time

Storage time

Fall time

V_CC=3V V_BE=0.5V I_C=10mA

I_B1= I_B2=1.0mA

V_CC=3V I_C=10mA

200

I_B1= I_B2=1.0mA

Operating and Storage Temperature Range

-55 to + 150

T_J, T_STG

CLASSIFICATION OF h_FE1

Rank

100-200

200-300

300-400

Range

Version: A07

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