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2N6727 PDF预览

2N6727

更新时间: 2024-01-17 17:04:42
品牌 Logo 应用领域
TRSYS 晶体晶体管
页数 文件大小 规格书
1页 66K
描述
Plastic-Encapsulated Transistors

2N6727 技术参数

生命周期:Active包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:compliant风险等级:5.82
最大集电极电流 (IC):2 A基于收集器的最大容量:30 pF
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-237AA
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP功耗环境最大值:1 W
最大功率耗散 (Abs):2 W表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzVCEsat-Max:0.5 V

2N6727 数据手册

  
Transys  
Electronics  
L
I M I T E D  
TO-92 Plastic-Encapsulated Transistors  
2N6727  
TRANSISTOR (PNP)  
TO-92  
FEATURES  
1. EMITTER  
Power dissipation  
PCM : 1  
2. BASE  
W(Tamb=25)  
3. COLLECTOR  
Collector current  
ICM  
:
-1.5 A  
1 2 3  
Collector-base voltage  
V(BR)CBO : -50  
V
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic= -1 mA, IE=0  
MIN  
-50  
-40  
-5  
TYP  
MAX  
UNIT  
V
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= -10 mA , IB=0  
IE= -1 mA, IC=0  
V
V
VCB= -50 V, IE=0  
-0.1  
-1  
µA  
µA  
µA  
ICEO  
VCB= -40 V, IB=0  
Collector cut-off current  
IEBO  
VEB= -5 V, IC=0  
-0.1  
250  
Emitter cut-off current  
HFE(1)  
VCE=-1 V, IC= -1 A  
VCE=-1 V, IC= -10 mA  
VCE=-1 V, IC= -100 mA  
IC= -1 A, IB= -100 mA  
VCE= -1 V, IC= -1 A  
VCE=-10 V , IC= -50 mA  
50  
55  
60  
DC current gain  
HFE(2)  
HFE(3)  
VCE(sat)  
VBE(on)  
f T  
-0.5  
-1.2  
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
50  
MHz  
Transition frequency  

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