TPCP8003-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
TPCP8003-H
High Efficiency DC/DC Converter Applications
Unit: mm
Notebook PC Applications
0.33±0.05
A
M
0.05
5
8
Portable Equipment Applications
•
•
•
•
•
•
•
Small footprint due to a small and thin package
High speed switching
0.475
1
4
B
B
M
0.05
0.65
Small gate charge: Q
= 7.5 nC (typ.)
SW
2.9±0.1
A
Low drain-source ON-resistance: R
= 130 mΩ (typ.)
DS (ON)
0.8±0.05
High forward transfer admittance: |Y | = 5.4 S (typ.)
fs
S
0.025
+0.1
S
0.28
0.17±0.02
-0.11
Low leakage current: I
= 10 μA (max) (V
= 100V)
DSS
DS
Enhancement mode: V = 1.1 to 2.3 V (V
= 10 V, I = 1mA)
D
th
DS
+0.13
-0.12
1.12
1.12
+0.13
-0.12
Absolute Maximum Ratings (Ta = 25°C)
+0.1
-0.11
0.28
1.Source
2.Source
3.Source
4.Gate
5.Drain
6.Drain
7.Drain
8.Drain
Characteristic
Drain-source voltage
Symbol
Rating
Unit
V
100
100
±20
2.2
V
V
V
DSS
V
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
JEDEC
JEITA
―
―
DGR
GS
V
GSS
DC
(Note 1)
I
D
TOSHIBA
2-3V1K
Drain current
A
Pulsed (Note 1)
I
8.8
DP
Weight: 0.017 g (typ.)
Drain power dissipation
Drain power dissipation
(t = 5 s)
(Note 2a)
(t = 5 s)
P
1.68
0.84
W
W
D
D
Circuit Configuration
8
7
6
5
P
(Note 2b)
Single-pulse avalanche energy
(Note 3)
E
3.93
2.2
mJ
A
AS
Avalanche current
I
AR
Repetitive avalanche energy
E
0.016
mJ
AR
(Tc=25℃) (Note 4)
T
T
150
°C
°C
Channel temperature
ch
1
2
3
4
−55 to 150
Storage temperature range
stg
8
7
6
5
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
8003H
※
1
2
3
4
This transistor is an electrostatic-sensitive device. Handle with care.
Lot No.
1
2007-06-22