Datasheet > TK9A55DA

TK9A55DA

更新时间： 2024-02-25 03:33:59

品牌	Logo	应用领域
东芝 - TOSHIBA		局域网开关脉冲晶体管
页数	文件大小	规格书
6页	254K
描述
TRANSISTOR 8.5 A, 550 V, 0.86 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power

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TK9A55DA 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	SC-67	包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.36	雪崩能效等级（Eas）：	252 mJ
外壳连接：	ISOLATED	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	550 V	最大漏极电流 (Abs) (ID)：	8.5 A
最大漏极电流 (ID)：	8.5 A	最大漏源导通电阻：	0.86 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	40 W	最大脉冲漏极电流 (IDM)：	34 A
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

TK9A55DA 数据手册

TK9A55DA

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

TK9A55DA

Switching Regulator Applications

Unit: mm

2.7 ± 0.2

10 ± 0.3

Ф3.2 ± 0.2

•

Low drain-source ON resistance: R

High forward transfer admittance: ⎪Y ⎪ = 4.7 S (typ.)

= 0.68 Ω (typ.)

DS (ON)

Low leakage current: I

= 10 μA (max) (V

= 550 V)

DSS

Enhancement-mode: V = 2 to 4 V (V

= 10 V, I = 1 mA)

1.14 ± 0.15

0.69 ± 0.15

Absolute Maximum Ratings (Ta = 25°C)

M A

Ф0.2

Characteristics

Drain-source voltage

Symbol

Rating

Unit

2.54

550

±30

8.5

DSS

Gate-source voltage

GSS

(Note 1)

Drain current

Pulse (Note 1)

1: Gate

2: Drain

3: Source

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

252

(Note 2)

JEDEC

JEITA

⎯

Avalanche current

8.5

SC-67

2-10U1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

150

Weight : 1.7 g (typ.)

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Internal Connection

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

3.125

62.5

°C/W

th (ch-c)

th (ch-a)

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 6.04 mH, R = 25 Ω, I = 8.5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

Start of commercial production

2009-01

2013-11-01

12 3 4 5 6

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