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TC55VEM216AGXN55 PDF预览

TC55VEM216AGXN55

更新时间: 2024-02-13 14:52:37
品牌 Logo 应用领域
东芝 - TOSHIBA 静态存储器内存集成电路
页数 文件大小 规格书
14页 124K
描述
IC 256K X 16 STANDARD SRAM, 70 ns, PBGA48, 6 X 8 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, TFBGA-48, Static RAM

TC55VEM216AGXN55 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA, BGA48,6X8,30针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:70 nsI/O 类型:COMMON
JESD-30 代码:R-PBGA-B48长度:8 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:48字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA48,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
电源:2.5/3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm最小待机电流:1.5 V
子类别:SRAMs最大压摆率:0.035 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM宽度:6.5 mm
Base Number Matches:1

TC55VEM216AGXN55 数据手册

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TC55VEM316AXGN40,55  
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS  
Lead-Free  
524,288-WORD BY 16-BIT FULL CMOS STATIC RAM  
DESCRIPTION  
The TC55VEM316AXGN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by  
16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to  
3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of  
3 mA/MHz and a minimum cycle time of 40 ns. It is automatically placed in low-power mode at 0.7 µA standby  
current (at VDD = 3 V, Ta = 25°C, typical) when chip enable ( CE1 ) is asserted high or (CE2) is asserted low. There  
are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output  
enable ( OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access.  
This device is well suited to various microprocessor system applications where high speed, low power and battery  
backup are required. And, with a guaranteed operating extreme temperature range of 40° to 85°C, the  
TC55VEM316AXGN can be used in environments exhibiting extreme temperature conditions. The  
TC55VEM316AXGN is available in a plastic 48-ball BGA.  
FEATURES  
Access Times:  
Low-power dissipation  
Operating: 9 mW/MHz (typical)  
TC55VEM316AXGN  
Single power supply voltage of 2.3 to 3.6 V  
Power down features usingCE1 and CE2  
Data retention supply voltage of 1.5 to 3.6 V  
Direct TTL compatibility for all inputs and outputs  
Wide operating temperature range of 40° to 85°C  
Standby Current (maximum):  
40  
55  
Access Time  
40 ns  
40 ns  
40 ns  
25 ns  
55 ns  
55 ns  
55 ns  
30 ns  
CE1 Access Time  
CE2 Access Time  
OE Access Time  
3.6 V  
3.0 V  
10 µA  
5 µA  
Package:  
P-TFBGA48-0811-0.75BZ (Weight: 0.157 g typ)  
Lead-Free  
PIN ASSIGNMENT (TOP VIEW)  
PIN NAMES  
48 PIN BGA  
A0~A18  
CE1 , CE2  
R/W  
Address Inputs  
Chip Enable  
1
2
3
4
5
6
A
B
C
D
E
F
LB  
OE  
UB  
A0  
A3  
A1  
A4  
A6  
A7  
A2  
CE2  
Read/Write Control  
Output Enable  
Data Byte Control  
I/O9  
CE1 I/O1  
I/O2 I/O3  
OE  
LB , UB  
I/O10 I/O11 A5  
I/O1~I/O16 Data Inputs/Outputs  
V
I/O12 A17  
I/O13 OP  
I/O4  
V
DD  
SS  
DD  
V
Power  
DD  
GND  
NC  
Ground  
V
A16 I/O5  
V
SS  
No Connection  
Option  
I/O15 I/O14 A14 A15 I/O6 I/O7  
A12 A13 R/W I/O8  
A9 A10 A11 NC  
OP*  
G I/O16 NC  
A18 A8  
*: OP pin must be open or connected to GND.  
H
2004-01-28 1/14  

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