RN2962FE

更新时间： 2024-02-27 19:07:56

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管开关光电二极管 PC
页数	文件大小	规格书
8页	559K
描述
Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

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技术参数
数据手册

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RN2962FE 技术参数

生命周期：	Lifetime Buy	包装说明：	SMALL OUTLINE, R-PDSO-F6
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.95
风险等级：	5.5	最大集电极电流 (IC)：	0.05 A
集电极-发射极最大电压：	20 V	配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	60	JESD-30 代码：	R-PDSO-F6
JESD-609代码：	e0	元件数量：	2
端子数量：	6	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.05 W	认证状态：	Not Qualified
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

RN2962FE 数据手册

RN2961FE~RN2966FE

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN2961FE,RN2962FE,RN2963FE

RN2964FE,RN2965FE,RN2966FE

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (6-pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

•

Complementary to RN1961FE~RN1966FE

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2961FE

RN2962FE

RN2963FE

RN2964FE

RN2965FE

RN2966FE

4.7

JEDEC

JEITA

―

2.2

4.7

TOSHIBA

2-2N1A

Weight: 0.003 g (typ.)

Maximum Ratings (Ta = 25°C) (Q1, Q2 common)

Equivalent Circuit

(top view)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−50

CBO

CEO

RN2961FE~2966FE

Collector-emitter voltage

Emitter-base voltage

RN2961FE~2964FE

RN2965FE, 2966FE

−10

EBO

−5

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note)

RN2961FE~2966FE

150

stg

−55~150

°C

Note: Total rating

2004-07-01

12 3 4 5 6 7 8

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